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Jon A. Schuller

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physics.optics cond-mat.mtrl-sci physics.app-ph cond-mat.mes-hall cond-mat.soft physics.comp-ph

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preprint2021arXiv

The scaling of the microLED and the advantage of 2D materials

The demand for higher resolution displays drives the demand for smaller pixels. Displays show a trend of doubling the pixel number every 4 years and doubling the pixel per inch (PPI) every 6 years. As the prospective candidate for next-generation display technology, microLED (micro Light Emitting Diode) will suffer from sidewall current leakage and poor extraction efficiency as its lateral size reduces. Using Finite Element Analysis (FEA) method and Finite-Difference Time-Domain (FDTD) method, we find that reducing the thickness of the LED can reduce the current leaking to the sidewalls and reduce the total internal reflection simultaneously. A promising solution to this problem is by using atomically thin 2D materials to make LEDs. However, monolayer inorganic 2D materials that can provide red, green and blue emission are still lacking. Based on the blue light-emitting material fluorographene (CF), partially fluorinated graphene (CFx) is synthesized in this work to emit red and green colors from 683 nm to 555 nm (limited by the instrument). This work also demonstrates lithographically defined regions with different colors, paving the way for the scaling of microLED.

preprint2020arXiv

Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics

We investigate Tamm plasmon (TP) modes in a metal/semiconductor distributed Bragg reflector (DBR) interface. A thin Ag (silver) layer with an optimized thickness (~ 55 nm from simulation) was deposited on nanoporous GaN DBRs fabricated using electrochemical etching on freestanding semipolar GaN substrates. The reflectivity spectra of the DBRs are compared before and after the Ag deposition and with that of a blanket Ag layer deposited on GaN. The results indicate presence of a TP mode at ~ 455 nm on the structure after the Ag deposition. An active medium can also be accommodated within the mode for optoelectronics and photonics. Moreover, the simulation results predict a sensitivity of the TP mode wavelength to the ambient (~ 4 nm shift when changing the ambient within the pores from air with n = 1 to isopropanol n = 1.3) , suggesting an application of the nanoporous GaN based TP structure for optical sensing.

preprint2019arXiv

Widely Tunable Optical and Thermal Properties of Dirac Semimetal Cd$_3$As$_2$

In this paper we report a detailed analysis of the temperature-dependent optical properties of epitaxially grown cadmium arsenide (Cd$_3$As$_2$), a newly discovered three-dimensional Dirac semimetal. Dynamic Fermi level tuning -- instigated from Pauli-blocking in the linear Dirac cone -- and varying Drude response, generate large variations in the mid and far-infrared optical properties. We demonstrate thermo-optic shifts larger than those of traditional III-V semiconductors, which we attribute to the obtained large thermal expansion coefficient as revealed by first-principles calculations. Electron scattering rate, plasma frequency edge, Fermi level shift, optical conductivity, and electron effective mass analysis of Cd$_3$As$_2$ thin-films are quantified and discussed in detail. Our ab initio density functional study and experimental analysis of epitaxially grown Cd$_3$As$_2$ promise applications for nanophotonic and nanoelectronic devices, such as reconfigurable metamaterials and metasurfaces, nanoscale thermal emitters, and on-chip directional antennas.

preprint2016arXiv

Morphology dependent optical anisotropies in the n-type polymer P(NDI2OD-T2)

Organic semiconductors tend to self-assemble into highly ordered and oriented morphologies with anisotropic optical properties. Studying these optical anisotropies provides insight into processing-dependent structural properties and informs the photonic design of organic photovoltaic and light-emitting devices. Here, we measure the anisotropic optical properties of spin-cast films of the n-type polymer P(NDI2OD-T2) using momentum-resolved absorption and emission spectroscopies. We quantify differences in the optical anisotropies of films deposited with distinct face-on and edge-on morphologies. In particular, we infer a substantially larger out-of-plane tilt angle of the optical transition dipole moment in high temperature annealed, edge-on films. Measurements of spectral differences between in-plane and out-of-plane dipoles, further indicate regions of disordered polymers in low temperature annealed face-on films that are otherwise obscured in traditional X-ray and optical characterization techniques. The methods and analysis developed in this work provide a way to identify and quantify subtle optical and structural anisotropies in organic semiconductors that are important for understanding and designing highly efficient thin film devices.