Researcher profile

John E. Anthony

John E. Anthony contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci physics.atm-clus physics.chem-ph

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preprint2022arXiv

Triplet-Pair Spin Signatures from Macroscopically Aligned Heteroacenes in an Oriented Single Crystal

The photo-driven process of singlet fission generates coupled triplet pairs (TT) with fundamentally intriguing and potentially useful properties. The quintet 5TT0 sublevel is particularly interesting for quantum information because it is highly entangled, addressable with microwave pulses, and could be detected using optical techniques. Previous theoretical work on a model Hamiltonian and nonadiabatic transition theory, called the JDE model, has determined that this sublevel can be selectively populated if certain conditions are met. Among the most challenging, the molecules within the dimer undergoing singlet fission must have their principal magnetic axes parallel to one another and to an applied Zeeman field B0. Here, we present time-resolved paramagnetic resonance (TR-EPR) spectroscopy of a single crystal sample of a novel tetracenethiophene compound featuring arrays of dimers aligned in this manner, mounted so that the orientation of the field relative to the molecular axes could be controlled. The observed spin sublevel populations in the paired TT and unpaired (T+T) triplets are consistent with predictions from the JDE model, including preferential 5TT0 formation at z||B0, with one caveat - two 5TT spin sublevels have little to no population. This may be due to crossings between the 5TT and 3TT manifolds in the field range investigated by TR-EPR, consistent with the inter-triplet exchange energy determined by monitoring photoluminescence at varying magnetic fields.

preprint2012arXiv

Fabrication and Characterization of Controllable Grain Boundary Arrays in Solution Processed Small Molecule Organic Semiconductor Films

We have produced solution-processed thin films of 6,13-bis(triisopropyl-silylethynyl) pentacene with grain sizes from a few micrometers up to millimeter scale by lateral crystallization from a rectangular stylus. Grains are oriented along the crystallization direction, and the grain size transverse to the crystallization direction depends inversely on the writing speed, hence forming a regular array of oriented grain boundaries with controllable spacing. We utilize these controllable arrays to systematically study the role of large-angle grain boundaries in carrier transport and charge trapping in thin film transistors. The effective mobility scales with the grain size, leading to an estimate of the potential drop at individual large-angle grain boundaries of more than one volt. This result indicates that the structure of grain boundaries is not molecularly abrupt, which may be a general feature of solution processed small molecule organic semiconductor thin films where relatively high energy grain boundaries are typically formed. This may be due to the crystal Transient measurements after switching from positive to negative gate bias or between large and small negative gate bias reveal reversible charge trapping with time constants on the order of 10 s, and trap densities that are correlated with grain boundary density. We suggest that charge diffusion along grain boundaries and other defects is the rate determining mechanism of the reversible trapping.

preprint2011arXiv

Growth of macroscopic-area single crystal polyacene thin films on arbitrary substrates

Organic electronic materials have potential applications in a number of low-cost, large area electronic devices such as flat panel displays and inexpensive solar panels. Small molecules in the series Anthracene, Tetracene, Pentacene, are model molecules for organic semiconductor thin films to be used as the active layers in such devices. This has motivated a number of studies of polyacene thin film growth and structure. Although the majority of these studies rely on vapor-deposited films, solvent-based deposition of films with improved properties onto non-crystalline substrates is desired for industrial production of devices. Improved ordering in thin films will have a large impact on their electronic properties, since grain boundaries and other defects are detrimental to carrier mobilities and lifetimes. Thus, a long-standing challenge in this field is to prepare largearea single crystal films on arbitrary substrates. Here we demonstrate a solvent-based method to deposit thin films of organic semiconductors, which is very general. Anthracene thin films with single-crystal domain sizes exceeding 1x1 cm2 can be prepared on various substrates by the technique. Films of 6,13-bis(triisopropylsilylethynyl)pentacene are also demonstrated to have grain sizes larger than 2x2 mm2. In contrast, films produced by conventional means such as vapor deposition or spin coating are polycrystalline with micron-scale grain sizes. The general propensity of these small molecules towards crystalline order in an optimized solvent deposition process shows that there is great potential for thin films with improved properties. Films prepared by these methods will also be useful in exploring the limits of performance in organic thin film devices.