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Johannes Mitscherling

Johannes Mitscherling contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Bound on resistivity in flat-band materials due to the quantum metric

The quantum metric is a central quantity of band theory but has so far not been related to many response coefficients due to its nonclassical origin. However, within a newly developed Kubo formalism for fast relaxation, the decomposition of the dc electrical conductivity into both classical (intraband) and quantum (interband) contributions recently revealed that the interband part is proportional to the quantum metric. Here, we show that interband effects due to the quantum metric can be significantly enhanced and even dominate the conductivity for semimetals at charge neutrality and for systems with highly quenched bandwidth. This is true in particular for topological flat-band materials of nonzero Chern number, where for intermediate relaxation rates an upper bound exists for the resistivity due to the common geometrical origin of quantum metric and Berry curvature. We suggest to search for these effects in highly tunable rhombohedral trilayer graphene flakes.

preprint2020arXiv

Charge carrier drop at the onset of pseudogap behavior in the two-dimensional Hubbard model

We show that antiferromagnetic spin-density wave order in the two-dimensional Hubbard model yields a drop of the charge carrier density as observed in recent transport measurements for cuprate superconductors in high magnetic fields upon entering the pseudogap regime. The amplitude and the (generally incommensurate) wave vector of the spin-density wave is obtained from dynamical mean-field theory (DMFT). An extrapolation of the finite temperature results to zero temperature yields an approximately linear doping dependence of the magnetic gap $Δ(p) \propto p^*-p$ in a broad doping range below the critical doping $p^*$. The magnetic order leads to a Fermi surface reconstruction with electron and hole pockets, where electron pockets exist only in a restricted doping range below $p^*$. DC charge transport properties are computed by combining the renormalized band structure as obtained from the DMFT with a doping-independent phenomenological scattering rate. A pronounced drop of the longitudinal conductivity and the Hall number in a narrow doping range below $p^*$ is obtained.