Charge Density Modulation and Defect Ordering in NaMnBi magnetic semimetal
The I-Mn-V antiferromagnet, NaMnBi, develops a very large positive magnetoresistance (MR) up to 10,000% at 2 K and 9 T in crystals showing a semiconductor-to-metal transition (SMT). In the absence of an SMT, a modest (20%) MR is achieved. Here, we show that upon cooling below the magnetic transition, a spatial modulation appears giving rise to new Bragg peaks due to charge and defect ordering in a checkerboard pattern, with two kinds of modulation vectors, =(, 0, 1) and =(). This constitutes a superlattice transition () that lowers the symmetry from the high temperature centrosymmetric P4/nmm to the non-centrosymmetric Pm2. In crystals with a large MR, a close to room temperature is observed with appearing first, followed by . In crystals with low MR however, is much lower and only is observed. The charge modulation and spin fluctuations may both contribute to the enhancement of MR.