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Jochen Tomaschko

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2 publications

preprint2011arXiv

Importance of grain boundary Josephson junctions in the electron-doped infinite-layer cuprate superconductor Sr1−x_{1-x}Lax_xCuO2_2

Grain boundary bicrystal Josephson junctions of the electron-doped infinite-layer superconductor Sr1−x_{1-x}Lax_xCuO2_2 (x=0.15x = 0.15) were grown by pulsed laser deposition. BaTiO3_3-buffered 24 ∘24\,^\circ [001]-tilt symmetric SrTiO3_3 bicrystals were used as substrates. We examined both Cooper pair (CP) and quasiparticle (QP) tunneling by electric transport measurements at temperatures down to 4.2\,K. CP tunneling revealed an extraordinary high critical current density for electron-doped cuprates of jc>103 j_c > 10^3\,A/cm2^2 at 4.2\,K. Thermally activated phase slippage was observed as dissipative mechanism close to the transition temperature. Out-of-plane magnetic fields HH revealed a remarkably regular Fraunhofer-like jc(H)j_c(H) pattern as well as Fiske and flux flow resonances, both yielding a Swihart velocity of 3.1⋅106 3.1\cdot10^6\,m/s. Furthermore, we examined the superconducting gap by means of QP tunneling spectroscopy. The gap was found to be V-shaped with an extrapolated zero temperature energy gap Δ0≈2.4 Δ_0 \approx 2.4\,meV. No zero bias conductance peak was observed.

preprint2011arXiv

Properties of the electron-doped infinite-layer superconductor Sr1−x_{1-x}Lax_{x}CuO2_{2} epitaxially grown by pulsed laser deposition

Thin films of the electron-doped infinite-layer cuprate superconductor Sr1−x_{1-x}Lax_xCuO2_2 (SLCO) with doping x≈0.15x \approx 0.15 were grown by means of pulsed laser deposition. (001)-oriented KTaO3_3 and SrTiO3_3 single crystals were used as substrates. In case of SrTiO3_3, a BaTiO3_3 thin film was deposited prior to SLCO, acting as buffer layer providing tensile strain to the SLCO film. To induce superconductivity, the as-grown films were annealed under reducing conditions, which will be described in detail. The films were characterized by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, Rutherford backscattering spectroscopy, and electric transport measurements at temperatures down to T=4.2 T = 4.2\,K. We discuss in detail the influence of different process parameters on the final film properties.

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