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Joanna Skiba-Szymanska

Joanna Skiba-Szymanska contributes to research discovery and scholarly infrastructure.

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physics.optics quant-ph cond-mat.mes-hall cond-mat.other

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preprint2022arXiv

Design study for an efficient semiconductor quantum light source operating in the telecom C-band based on an electrically-driven circular Bragg grating

The development of efficient sources of single photons and entangled photon pairs emitting in the low-loss wavelength region around 1550 nm is crucial for long-distance quantum communication. Moreover, direct fiber coupling and electrical carrier injection are highly desirable for deployment in compact and user-friendly systems integrated with the existing fiber infrastructure. Here we present a detailed design study of circular Bragg gratings etched in InP slabs and operating in the telecom C-band. These devices enable the simultaneous enhancement of the X and XX spectral lines, with collection efficiency in NA=0.65 close to 90% for the wavelength range 1520-1580 nm and Purcell factor up to 15. We also investigate the coupling into single mode fiber, which exceeds 70% in UHNA4. Finally, we propose a modified device design directly compatible with electrical carrier injection, reporting Purcell factors up to 20 and collection efficiency in NA=0.65 close to 70% for the whole telecom C-band.

preprint2022arXiv

High performance single-photon sources at telecom wavelength based on broadband hybrid circular Bragg gratings

Semiconductor quantum dots embedded in hybrid circular Bragg gratings are a promising platform for the efficient generation of nonclassical light. The scalable fabrication of multiple devices with similar performance is highly desirable for their practical use as sources of single and entangled photons, while the ability to operate at telecom wavelength is essential for their integration with the existing fiber infrastructure. In this work we combine the promising properties of broadband hybrid circular Bragg gratings with a membrane-transfer process performed on 3" wafer scale. We develop and study single-photon sources based on InAs/GaAs quantum dots emitting in the telecom O-band, demonstrating bright single-photon emission with Purcell factor > 5 and count rates up to 10 MHz. Furthermore, we address the question of reproducibility by benchmarking the performance of 10 devices covering a wide spectral range of 50 nm within the O-band.

preprint2014arXiv

In-plane emission of indistinguishable photons generated by an integrated quantum emitter

We demonstrate the emission of indistinguishable photons along a semiconductor chip originating from carrier recombination in an InAs quantum dot. The emitter is integrated in the waveguiding region of a photonic crystal structure, allowing for on-chip light propagation. We perform a Hong-Ou-Mandel-type of experiment with photons collected from the exit of the waveguide and we observe two-photon interference under continuous wave excitation. Our results pave the way for the integration of quantum emitters in advanced photonic quantum circuits.

preprint2014arXiv

On-chip generation and guiding of quantum light from a site-controlled quantum dot

We demonstrate the emission and routing of single photons along a semiconductor chip originating from carrier recombination in an actively positioned InAs quantum dot. Device scale arrays of quantum dots are formed by a two step regrowth process. We precisely locate the propagating region of a unidirectional photonic crystal waveguide with respect to the quantum dot nucleation site. Under pulsed optical excitation, the multiphoton emission probability from the exit of the waveguide is 12 \pm 5 % before any background correction. Our results are a major step towards the deterministic integration of a quantum emitter with the waveguiding components of photonic quantum circuits.

preprint2010arXiv

Giant Stark effect in the emission of single semiconductor quantum dots

We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of -500 kV/cm, leading to Stark shifts of up to 25 meV. Our results suggest this technique may enable future applications that require self-assembled dots with transitions at the same energy.