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Researcher profile

Jixia Dai

Jixia Dai contributes to research discovery and scholarly infrastructure.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.supr-concond-mat.mes-hall

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Published work

7 published item(s)

preprint2015arXiv

Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Time reversal symmetry breaking superconductivity in topological materials

Fascinating phenomena have been known to arise from the Dirac theory of relativistic quantum mechanics, which describes high energy particles having linear dispersion relations. Electrons in solids usually have non-relativistic dispersion relations but their quantum excitations can mimic relativistic effects. In topological insulators, electrons have both a linear dispersion relation, the Dirac behavior, on the surface and a non-relativistic energy dispersion in the bulk. Topological phases of matter have attracted much interest, particularly broken-symmetry phases in topological insulator materials. Here, we report by Nb doping that the topological insulator Bi2Se3 can be turned into a bulk type-II superconductor while the Dirac surface dispersion in the normal state is preserved. A macroscopic magnetic ordering appears below the superconducting critical temperature of 3.2 K indicating a spontaneous spin rotation symmetry breaking of the Nb magnetic moments. Even though such a magnetic order may appear at the edge of the superconductor, it is mediated by superconductivity and presents a novel phase of matter which gives rise to a zero-field Hall effect.

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preprint2014arXiv

Hierarchical stripe phases in IrTe2 driven by competition between Ir dimerization and Te bonding

Layered 5d transition metal dichalcogenide (TMD) IrTe2 is distinguished from the traditional TMDs (such as NbSe2) by the existence of multiple CDW-like stripe phases and superconductivity at low temperatures. Despite of intensive studies, there is still no consensus on the physical origin of the stripe phases or even the ground state modulation for this 5d material. Here, we present atomic-scale evidence from scanning tunneling microscopy and spectroscopy (STM/STS), that the ground state of IrTe2 is a q=1/6 stripe phase, identical to that of the Se-doped compound. Furthermore, our data suggest that the multiple transitions and stripe phases are driven by the intralayer Ir-Ir dimerization that competes against the interlayer Te-Te bonding. The competition results in a unified phase diagram with a series of hierarchical modulated stripe phases, strikingly similar to the renowned "devil's staircase" phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Local density of states study of a spin-orbit-coupling induced Mott insulator Sr$_2$IrO$_4$

We present scanning tunneling microscopy and spectroscopy experiments on the novel J_eff = 1/2 Mott insulator Sr2IrO4. Local density of states (LDOS) measurements show an intrinsic insulating gap of 620 meV that is asymmetric about the Fermi level and is larger than previously reported values. The size of this gap suggests that Sr2IrO4 is likely a Mott rather than Slater insulator. In addition, we found a small number of native defects which create in-gap spectral weight. Atomically resolved LDOS measurements on and off the defects shows that this energy gap is quite fragile. Together the extended nature of the 5d electrons and poor screening of defects help explain the elusive nature of this gap.

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preprint2014arXiv

Microscopic evidence for strong periodic lattice distortion in 2D charge-density wave systems

In the quasi-2D electron systems of the layered transition metal dichalcogenides (TMD) there is still a controversy about the nature of the transitions to charge-density wave (CDW) phases, i.e. whether they are described by a Peierls-type mechanism or by a lattice-driven model. By performing scanning tunneling microscopy (STM) experiments on the canonical TMD-CDW systems, we have imaged the electronic modulation and the lattice distortion separately in 2H-TaS$_2$, TaSe$_2$, and NbSe$_2$. Across the three materials, we found dominant lattice contributions instead of the electronic modulation expected from Peierls transitions, in contrast to the CDW states that show the hallmark of contrast inversion between filled and empty states. Our results imply that the periodic lattice distortion (PLD) plays a vital role in the formation of CDW phases in the TMDs and illustrate the importance of taking into account the more complicated lattice degree of freedom when studying correlated electron systems.

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preprint2014arXiv

Restoring Pristine Bi2Se3 Surface with an Effective Se Decapping Process

High quality thin films of topological insulators (TI) such as Bi2Se3 have been successfully synthesized by molecular beam epitaxy (MBE). Although the surface of MBE films can be protected by capping with inert materials such as amorphous Se, restoring an atomically clean pristine surface after decapping has never been demonstrated, which prevents in-depth investigations of the intrinsic properties of TI thin films with ex-situ tools. Using high resolution scanning tunneling microscopy/spectroscopy (STM/STS), we demonstrate a simple and highly reproducible Se decapping method that allows recovery of the pristine surface of extremely high quality Bi2Se3 thin films grown and capped with Se in a separate MBE system then exposed to atmosphere during transfer into the STM system. The crucial step of our decapping process is the removal of the surface contaminants on top of amorphous Se before thermal desorption of Se at a mild temperature (~210 °C). This effective Se decapping process opens up the possibility of ex-situ characterizations of pristine surfaces of interesting selenide materials and beyond using cutting-edge techniques.

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preprint2013arXiv

The k-space Origins of Scattering in Bi2Sr2CaCu2O8+x

We demonstrate a general, computer automated procedure that inverts the q-space scattering data measured by spectroscopic imaging scanning tunneling microscopy (SI-STM) to determine the k-space scattering structure. This allows a detailed examination of the k-space origins of the quasiparticle interference (QPI) pattern in Bi2Sr2CaCu2O8+x. This new method allows the measurements of the differences between the positive and negative energy dispersions, the gap structure and it also measures energy dependent scattering length scale. Furthermore, the transitions between the dispersive QPI, the checkerboard and the pseudogap are mapped in detail allowing the exact nature of these transitions to be determined for both positive and negative energies. We are also able to measure the k-space scattering structure over a wide range of doping (p ~ 0.22 to 0.08), including regions where the octet model is not applicable. Our technique allows a complete picture of the k-space origins of the spatial excitations in Bi2Sr2CaCu2O8+x to be mapped out, providing for better comparisons between SI-STM and other experimental probes of the band structure and validating our new general approach for determining the k-space scattering origins from SI-STM data.

0 citations0 reviewsNo code linkedOpen access