BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Jinxing Zhang

Jinxing Zhang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallmath-phmath.MPphysics.app-ph

Catalog footprint

What is connected

9works
6topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

9 published item(s)

preprint2023arXiv

Miniature Magnetic Nano islands in a Morphotropic Cobaltite Matrix

High-density magnetic memories are key components in spintronics, quantum computing, and energy-efficient electronics. Reduced dimensionality and magnetic domain stability at the nanoscale are essential for the miniaturization of magnetic storage units. Yet, inducing magnetic order, and selectively tuning spin-orbital coupling at specific locations have remained challenging. Here we demonstrate the construction of switchable magnetic nano-islands in a nonmagnetic matrix based on cobaltite homo-structures. The magnetic and electronic states are laterally modified by epitaxial strain, which is regionally controlled by freestanding membranes. Atomically sharp grain boundaries isolate the crosstalk between magnetically distinct regions. The minimal size of magnetic nano-islands reaches 35 nm in diameter, enabling an areal density of 400 Gbit per inch square. Besides providing an ideal platform for precisely controlled read and write schemes, this methodology can enable scalable and patterned memories on silicon and flexible substrates for various applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Exchange bias in van der Waals MnBi$_2$Te$_4$/Cr$_2$Ge$_2$Te$_6$ heterostructure

The layered van der Waals (vdW) material MnBi$_2$Te$_4$ is an intrinsic magnetic topological insulator with various topological phases such as quantum anomalous Hall effect (QAHE) and axion states. However, both the zero-field and high-temperature QAHE are not easy to realize. It is theoretically proposed that the exchange bias can be introduced in the MnBi2Te4/ferromagnetic (FM) insulator heterostructures and thus opens the surface states gap, making it easier to realize the zero-field or high-temperature QAHE. Here we report the electrically tunable exchange bias in the van der Waals MnBi$_2$Te$_4$/Cr$_2$Ge$_2$Te$_6$ heterostructure. The exchange bias emerges over a critical magnetic field and reaches the maximum value near the magnetic band gap. Moreover, the exchange bias was experienced by the antiferromagnetic (AFM) MnBi$_2$Te$_4$ layer rather than the FM layer. Such van der Waals heterostructure provides a promising platform to study the novel exchange bias effect and explore the possible high-temperature QAHE.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Exact exponential synchronization rate of high-dimensional Kuramoto models with identical oscillators and digraphs

For the high-dimensional Kuramoto model with identical oscillators under a general digraph that has a directed spanning tree, although exponential synchronization was proved under some initial state constraints, the exact exponential synchronization rate has not been revealed until now. In this paper, the exponential synchronization rate is precisely determined as the smallest non-zero real part of Laplacian eigenvalues of the digraph. Our obtained result extends the existing results from the special case of strongly connected balanced digraphs to the condition of general digraphs owning directed spanning trees, which is the weakest condition for synchronization from the aspect of network structure. Moreover, our adopted method is completely different from and much more elementary than the previous differential geometry method.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electric-field-controllable high-spin SrRuO3 driven by a solid ionic junction

Controlling magnetism and spin structures in strongly correlated systems by using electric field is of fundamental importance but challenging. Here, a high-spin ruthenate phase is achieved via a solid ionic chemical junction at SrRuO3/SrTiO3 interface with distinct formation energies and diffusion barriers of oxygen vacancies, analogue to electronic band alignment in semiconductor heterojunction. Oxygen vacancies trapped within this interfacial SrRuO3 reconstruct Ru-4d electronic structure and orbital occupancy, leading to an enhanced magnetic moment. Furthermore, an interfacial magnetic phase can be switched reversibly by electric-field-rectifying oxygen migration in a solid-state ionic gating device, providing a framework for atomic design of functionalities in strongly correlated oxides using a way of solid chemistry.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large-area printing of ferroelectric surface and super-domains for efficient solar water splitting

Surface electronic structures of the photoelectrodes determine the activity and efficiency of the photoelectrochemical water splitting, but the controls of their surface structures and interfacial chemical reactions remain challenging. Here, we use ferroelectric BiFeO3 as a model system to demonstrate an efficient and controllable water splitting reaction by large-area constructing the hydroxyls-bonded surface. The up-shift of band edge positions at this surface enables and enhances the interfacial holes and electrons transfer through the hydroxyl-active-sites, leading to simultaneously enhanced oxygen and hydrogen evolutions. Furthermore, printing of ferroelectric super-domains with microscale checkboard up/down electric fields separates the distribution of reduction/oxidation catalytic sites, enhancing the charge separation and giving rise to an order of magnitude increase of the photocurrent. This large-area printable ferroelectric surface and super-domains offer an alternative platform for controllable and high-efficient photocatalysis.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Domain and Phase De-strain - Formation of Ferroelastic Domain Structures

Phase decomposition is a well-known process leading to the formation of two-phase mixtures. Here we show that a strain imposed on a ferroelastic crystal promotes the formation of mixed phases and domains, i.e., domain and phase de-strain with local strains determined by a common tangent construction on the free energy versus strain curves. It is demonstrated that a domain structure can be understood using the concepts of domain/phase rule, lever rule, coherent and incoherent de-strain within the de-strain model description, in a complete analogy to phase decomposition. The proposed de-strain model is validated using phase-field simulations and experimental observations of PbTiO_3 and BiFeO_3 thin films as examples. The de-strain model provides a simple tool to guide and design domain structures of ferroelastic systems.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A Nanoscale Shape Memory Oxide

Stimulus-responsive shape memory materials have attracted tremendous research interests recently, with much effort focused on improving their mechanical actuation. Driven by the needs of nanoelectromechnical devices, materials with large mechanical strain particularly at nanoscale are therefore desired. Here we report on the discovery of a large shape memory effect in BiFeO3 at the nanoscale. A maximum strain of up to ~14% and a large volumetric work density can be achieved in association with a martensitic-like phase transformation. With a single step, control of the phase transformation by thermal activation or electric field has been reversibly achieved without the assistance of external recovery stress. Although aspects such as hysteresis, micro-cracking etc. have to be taken into consideration for real devices, the large shape memory effect in this oxide surpasses most alloys and therefore demonstrates itself as an extraordinary material for potential use in state-of-art nano-systems.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Doping influence of spin dynamics and magnetoelectric effect in hexagonal Y$_{0.7}$Lu$_{0.3}$MnO$_{3}$

We use inelastic neutron scattering to study spin waves and their correlation with the magnetoelectric effect in Y$_{0.7}$Lu$_{0.3}$MnO$_3$. In the undoped YMnO$_3$ and LuMnO$_3$, the Mn trimerization distortion has been suggested to play a key role in determining the magnetic structure and the magnetoelectric effect. In Y$_{0.7}$Lu$_{0.3}$MnO$_3$, we find a much smaller in-plane (hexagonal $ab$-plane) single ion anisotropy gap that coincides with a weaker in-plane dielectric anomaly at $T_N$. Since both the smaller in-plane anisotropy gap and the weaker in-plane dielectric anomaly are coupled to a weaker Mn trimerization distortion in Y$_{0.7}$Lu$_{0.3}$MnO$_3$ comparing to YMnO$_3$ and LuMnO$_3$, we conclude that the Mn trimerization is responsible for the magnetoelectric effect and multiferroic phenomenon in Y$_{1-y}$Lu$_{y}$MnO$_{3}$.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011)

A central goal of electronics based on correlated materials or 'Mottronics' is the ability to switch between distinct collective states with a control voltage. Small changes in structure and charge density near a transition can tip the balance between competing phases, leading to dramatic changes in electronic and magnetic properties. In this work, we demonstrate that an electric field induced two-step ferroelastic switching pathway in (011) oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates can be used to tune the Verwey metal-insulator transition in epitaxial Fe3O4 films in a stable and reversible manner. We also observe robust non-volatile resistance switching in Fe3O4 up to room temperature, driven by ferroelastic strain. These results provides a framework for realizing non-volatile and reversible tuning of order parameters coupled to lattice-strain in epitaxial oxide heterostructures over a broad range of temperatures, with potential device applications.

0 citations0 reviewsNo code linkedOpen access