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Jinxiang Wang

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Published work

6 published item(s)

preprint2025arXiv

Existence, uniqueness, and approximability of solutions to the classical Melan equation in suspension bridges

The classical Melan equation modeling suspension bridges is considered. We first study the explicit expression and the uniform positivity of the analytical solution for the simplified ``less stiff'' model, based on which we develop a monotone iterative technique of lower and upper solutions to investigate the existence, uniqueness and approximability of the solution for the original classical Melan equation.The applicability and the efficiency of the monotone iterative technique for engineering design calculations are discussed by verifying some examples of actual bridges. Some open problems are suggested.

preprint2025arXiv

Splatwizard: A Benchmark Toolkit for 3D Gaussian Splatting Compression

The recent advent of 3D Gaussian Splatting (3DGS) has marked a significant breakthrough in real-time novel view synthesis. However, the rapid proliferation of 3DGS-based algorithms has created a pressing need for standardized and comprehensive evaluation tools, especially for compression task. Existing benchmarks often lack the specific metrics necessary to holistically assess the unique characteristics of different methods, such as rendering speed, rate distortion trade-offs memory efficiency, and geometric accuracy. To address this gap, we introduce Splatwizard, a unified benchmark toolkit designed specifically for benchmarking 3DGS compression models. Splatwizard provides an easy-to-use framework to implement new 3DGS compression model and utilize state-of-the-art techniques proposed by previous work. Besides, an integrated pipeline that automates the calculation of key performance indicators, including image-based quality metrics, chamfer distance of reconstruct mesh, rendering frame rates, and computational resource consumption is included in the framework as well. Code is available at https://github.com/splatwizard/splatwizard

preprint2020arXiv

Existence and uniqueness of positive solutions for Kirchhoff type beam equations

This paper is concerned with the existence and uniqueness of positive solution for the fourth order Kirchhoff type problem $$\left\{\begin{array}{ll} u''''(x)-(a+b\int_0^1(u'(x))^2dx)u''(x)=λf(u(x)),\ \ \ \ x\in(0,1),\\ u(0)=u(1)=u''(0)=u''(1)=0,\\ \end{array} \right. $$ where $a>0, b\geq 0$ are constants, $λ\in \mathbb{R}$ is a parameter. For the case $f(u)\equiv u$, we use an argument based on the linear eigenvalue problems of fourth order equations and their properties to show that there exists a unique positive solution for all $λ>λ_{1,a}$, here $λ_{1,a}$ is the first eigenvalue of the above problem with $b=0$; For the case $f$ is sublinear, we prove that there exists a unique positive solution for all $λ>0$ and no positive solution for $λ<0$ by using bifurcation method.

preprint2020arXiv

Monotone iterative technique for nonlinear fourth order integro-differential equations

In this paper, we consider the solvability of a class of nonlinear fourth order integro-differential equations with Navier boundary condition. We first deal with a corresponding linear problem and establish a maximum principle. Using the maximum principle, we develop a monotone iterative technique in the presence of lower and upper solutions to solve the nonlinear problem under certain conditions. Some examples are presented to illustrate the main results.

preprint2016arXiv

Heavy Ion Induced SEU Sensitivity Evaluation of 3D Integrated SRAMs

Heavy ions induced single event upset (SEU) sensitivity of three-dimensional integrated SRAMs are evaluated by using Monte Carlo sumulation methods based on Geant4. The cross sections of SEUs and Multi Cell Upsets (MCUs) for 3D SRAM are simulated by using heavy ions with different energies and LETs. The results show that the sensitivity of different die of 3D SRAM has obvious discrepancies at low LET. Average percentage of MCUs of 3D SRAMs rises from 17.2% to 32.95% when LET increases from 42.19 MeV cm2/mg to 58.57MeV cm2/mg. As for a certain LET, the percentage of MCUs shows a notable distinction between face-to-face structure and back-to-face structure. For back-to-face structure, the percentage of MCUs increases with the deeper die. However, the face-to-face die presents the relatively low percentage of MCUs. The comparison of SEU cross sections for planar SRAMs and experiment data are conducted to indicate the effectiveness of our simulation method. Finally, we compare the upset cross sections of planar process and 3D integrated SRAMs. Results demonstrate that the sensitivity of 3D SRAMs is not more than that of planar SRAMs and the 3D structure can be become a great potential application for aerospace and military domain.