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Jinsong Xu

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Published work

3 published item(s)

preprint2024arXiv

Electrical Seebeck-Contrast Observation of Magnon Hall Effect in Topological Ferromagnet Lu$_2$V$_2$O$_7$/Heavy Metal Heterostructures

The observation of the magnon Hall effect (MHE) has relied solely on the challenging measurement of the thermal Hall conductivity. Here, we report a highly sensitive electrical Seebeck-contrast method for the observation of MHE in Lu$_2$V$_2$O$_7$/heavy metal heterostructures, that is highly desirable for the exploration of new MHE materials and their applications. Using measuring wires with very different Seebeck coefficients, we established a general method that can separate contributions (e.g., MHE) that generates a lateral temperature drop, from those [e.g., anomalous Nernst effect (ANE) and spin Seebeck effect (SSE)] that generate a lateral electric field. We show that a suitable heavy metal overlayer can eliminate the inherent ANE and SSE signals from the semiconducting Lu$_2$V$_2$O$_7$. The MHE in Lu$_2$V$_2$O$_7$ is quasi-isotropic among crystals with different orientations. In addition to the previously reported transverse MHE under an in-plane temperature gradient, we have uncovered longitudinal MHE under an out-of-plane temperature gradient.

preprint2021arXiv

Voltage Controlled Spin-Orbit Torque Switching in W/CoFeB/MgO

Voltage control of magnetism and spintronics have been highly desirable, but rarely realized. In this work, we show voltage-controlled spin-orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with voltage administered through SrTiO3 with a high dielectric constant. We show that a DC voltage can significantly lower PMA by 45%, reduce switching current by 23%, and increase the damping-like torque as revealed by the first and second-harmonic measurements. These are characteristics that are prerequisites for voltage-controlled and voltage-select SOT switching spintronic devices.

preprint2016arXiv

Spatially Resolved Electronic Properties of Single-Layer WS$_2$ on Transition Metal Oxides

There is a substantial interest in the heterostructures of semiconducting transition metal dichalcogenides (TMDCs) amongst each other or with arbitrary materials, through which the control of the chemical, structural, electronic, spintronic, and optical properties can lead to a change in device paradigms. A critical need is to understand the interface between TMDCs and insulating substrates, for example high-$κ$ dielectrics, which can strongly impact the electronic properties such as the optical gap. Here we show that the chemical and electronic properties of the single-layer (SL) TMDC, WS$_2$, can be transferred onto high-$κ$ transition metal oxide substrates TiO$_2$ and SrTiO$_3$. The resulting samples are much more suitable for measuring their electronic and chemical structures with angle-resolved photoemission than their native-grown SiO$_2$ substrates. We probe the WS$_2$ on the micron scale across 100-micron flakes, and find that the occupied electronic structure is exactly as predicted for freestanding SL WS$_2$ with a strong spin-orbit splitting of 420~meV and a direct band gap at the valence band maximum. Our results suggest that TMDCs can be combined with arbitrary multi-functional oxides, which may introduce alternative means of controlling the optoelectronic properties of such materials.