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Jinkyoung Yoo

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Published work

3 published item(s)

preprint2024arXiv

Twisted nonlinear optics in monolayer van der Waals crystals

In addition to a plethora of emergent phenomena, the spatial topology of optical vortices enables an array of applications spanning communications to quantum photonics. Nonlinear optics is essential in this context, providing access to an infinitely large set of quantum states associated with the orbital angular momentum of light. Nevertheless, the realization of such processes have failed to keep pace with the ever-growing need to shrink the fundamental length-scale of photonic technologies to the nanometer regime6. Here, we push the boundaries of vortex nonlinear optics to the ultimate limits of material dimensionality. By exploiting second and third-order frequency-mixing processes in semiconducting monolayers, we demonstrate the independent manipulation of the wavelength, orbital angular momentum, and spatial distribution of vortex light-fields. Due to the atomically-thin nature of the host quantum material, this control spans a broad spectral bandwidth in a highly-integrable platform, unconstrained by the traditional limits of bulk nonlinear optical materials. Our work heralds a new avenue for ultra-compact and scalable hybrid nanotechnologies empowered by twisted nonlinear light-matter interactions in van der Waals quantum nanomaterials.

preprint2016arXiv

High critical magnetic field superconducting contacts to Ge/Si core/shell nanowires

Contacts between high critical field superconductors and semiconductor nanowires are important in the context of topological quantum circuits in which superconductivity must be sustained to high magnetic fields. Here we demonstrate gate-tunable supercurrent in NbTiN-Ge/Si core/shell nanowire-NbTiN junctions. We observe supercurrents up to magnetic fields of 800 mT. The induced soft superconducting gap measured by co-tunneling through a quantum dot is 220 μeV. To improve contact transparency, we deposit an aluminum interlayer prior to NbTiN and observe a systematic change in the device pinch-off voltages with aluminum thickness. We inform future multi-step device fabrication by observing that aluminum anneals with the Ge/Si nanowire at 180° celsius, the baking temperature of common electron beam lithography resists.

preprint2013arXiv

Probing quantum confinement within single core-multishell nanowires

Theoretically core-multishell nanowires under a cross-section of hexagonal geometry should exhibit peculiar confinement effects. Using a hard X-ray nanobeam, here we show experimental evidence for carrier localization phenomena at the hexagon corners by combining synchrotron excited optical luminescence with simultaneous X-ray fluorescence spectroscopy. Applied to single coaxial n-GaN/InGaN multiquantum-well/p-GaN nanowires, our experiment narrows the gap between optical microscopy and high-resolution X-ray imaging, and calls for further studies on the underlying mechanisms of optoelectronic nanodevices.