Researcher profile

Jinhua Hong

Jinhua Hong contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Momentum-dependent oscillator strength crossover of excitons and plasmons in two-dimensional PtSe2

The 1T-phase layered PtX2 chalcogenides has attracted widespread interest due to its thickness dependent metal-semiconductor transition driven by strong interlayer coupling. While the ground state properties of this paradigmatic material system have been widely explored, its fundamental excitation spectrum remains poorly understood. Here we combine first principles calculations with momentum (q) resolved electron energy loss spectroscopy (q-EELS) to study the collective excitations in 1T-PtSe2 from the monolayer limit to the bulk. At finite momentum transfer all the spectra are dominated by two distinct interband plasmons that disperse to higher energy with increasing q. Interestingly, the absence of long-range screening in the two-dimensional (2D) limit, inhibits the formation of long wavelength plasmons. Consequently, in the small-q limit, excitations in monolayer PtSe2 are exclusively of excitonic nature, and the loss spectrum coincides with the optical spectrum. Our work unravels the excited state spectrum of layered 1T-PtSe2 and establishes the qualitatively different momentum dependence of excitons and plasmons in 2D materials.

preprint2021arXiv

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal electrodes always leads to high contact resistance, which seriously hinders their application in 2D electronics. One effective way to overcome this is to use metallic TMDCs or transferred metal electrodes as van der Waals (vdW) contacts. Alternatively, using highly conductive doped TMDCs will have a profound impact on the contact engineering of 2D electronics. Here, a novel chemical vapor deposition using mixed molten salts is established for vapor-liquid-solid growth of high-quality rhenium (Re) and vanadium (V)-doped TMDC monolayers with high controllability and reproducibility. A tunable semiconductor to metal transition is observed in the Re and V-doped TMDCs. Electrical conductivity increases up to a factor of 108 in the degenerate V-doped WS2 and WSe2. Using V-doped WSe2 as vdW contact, the on-state current and on/off ratio of WSe2-based field-effect transistors have been substantially improved (from ~10-8 to 10-5 A; ~104 to 108), compared to metal contacts. Future studies on lateral contacts and interconnects using doped TMDCs will pave the way for 2D integrated circuits and flexible electronics.

preprint2019arXiv

Probing exciton dispersions of freestanding monolayer WSe2 by momentum resolved electron energy loss spectroscopy

Momentum resolved electron energy-loss spectroscopy was used to measure the dispersions of excitons in a free-standing monolayer of WSe2. Besides the parabolically dispersed valley excitons, a sub-gap dispersive exciton was observed at specific q values for the first time. The simultaneous STEM-ADF imaging of the local probed areas suggests that this sub-gap exciton is attributed to the prolific Se vacancies.