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Researcher profile

Jingzhi Shang

Jingzhi Shang contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

5 published item(s)

preprint2013arXiv

Synthesis and optical properties of large-scale single-crystalline two-dimensional semiconductor WS2 monolayer from chemical vapor deposition

Two-dimensional (2D) transition metal dichalcogenides (TMDs), especially MoS2 and WS2 recently attract extensive attentions due to their rich physics and great potential applications. Superior to graphene, MS2 (M = Mo/W) monolayers have a native direct energy gap in visible frequency range. This promises great future of MS2 for optoelectronics. To exploit properties and further develop more applications, producing large-scale single crystals of MS2 by a facile method is highly demanded. Here, we report the synthesis of large-scale triangular single crystals of WS2 monolayer from a chemical vapor deposition process and systematic optical studies of such WS2 monolayers. The observations of high yield of light emission and valley-selective circular dichroism experimentally evidence the high optical quality of the WS2 monolayers. This work paves the road to fabricate large-scale single crystalline 2D semiconductors and study their fundamentals. It must be very meaningful for exploiting great potentials of WS2 for future optoelectronics.

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preprint2013arXiv

Terahertz conductivity of twisted bilayer graphene

Using terahertz time-domain spectroscopy, the real part of optical conductivity [$σ_{1}(ω)$] of twisted bilayer graphene was obtained at different temperatures (10 -- 300 K) in the frequency range 0.3 -- 3 THz. On top of a Drude-like response, we see a strong peak in $σ_{1} (ω)$ at $\sim$2.7 THz. We analyze the overall Drude-like response using a disorder-dependent (unitary scattering) model, then attribute the peak at 2.7 THz to an enhanced density of states at that energy, that is caused by the presence of a van Hove singularity arising from a commensurate twisting of the two graphene layers.

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preprint2011arXiv

Hysteresis of Electronic Transport in Graphene Transistors

Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two different kinds of hysteresis in their electrical characteristics. Charge transfer causes a positive shift in the gate voltage of the minimum conductance, while capacitive gating can cause the negative shift of conductance with respect to gate voltage. The positive hysteretic phenomena decay with an increase of the number of layers in graphene flakes. Self-heating in helium atmosphere significantly removes adsorbates and reduces positive hysteresis. We also observed negative hysteresis in graphene devices at low temperature. It is also found that an ice layer on/under graphene has much stronger dipole moment than a water layer does. Mobile ions in the electrolyte gate and a polarity switch in the ferroelectric gate could also cause negative hysteresis in graphene transistors. These findings improved our understanding of the electrical response of graphene to its surroundings. The unique sensitivity to environment and related phenomena in graphene deserve further studies on nonvolatile memory, electrostatic detection and chemically driven applications.

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preprint2010arXiv

Electronic Structure and Structural Evolutions of Hydrogenated Graphene Probed by Raman Spectroscopy

The electronic structure and structural evolution of hydrogenated graphene are investigated by Raman spectroscopy with multiple excitations. The excitation energy dependent saturation effect on the ratio of integrated intensities of D and G modes (ID/IG) is revealed and further developed as a quick method for estimation of inter-defect distance and defect density in hydrogenated graphene. At low hydrogen coverage, the chemisorbed H atoms behave like defects in sp2 C=C matrix; while for a high hydrogen coverage, the sp3 C-H bonds become coalescent clusters, resulting in confinement effect on the sp2 C domains. Electronic structure changes caused by varying hydrogen coverage are evidenced by excitation energy dependent red shift of D and 2D bands. Our results provide a useful guide for developing applications of hydrogenated graphene, as well as using Raman spectroscopy as quick metrology of the defect density in further exploring other kinds of graphene derivatives.

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preprint2010arXiv

Large Scale Synthesis of Bi-layer Graphene in Strongly Coupled Stacking Order

Large scale synthesis of single layer graphene (SLG) by chemical vapor deposition (CVD) has received a lot of attention recently. However, CVD synthesis of AB stacked bi-layer graphene (BLG) is still a challenging work. Here we report synthesis of BLG homogeneously in large area by thermal CVD. The 2D Raman band of CVD BLG splits into four components, suggesting splitting of electronic bands due to strong interlayer coupling. The splitting of electronic bands in CVD BLG is further evidenced by the study of near infrared (NIR) absorption and carrier dynamics probed by transient absorption spectroscopy. Ultraviolet photoelectron spectroscopy invesigation also indiates CVD BLG possesses different electronic structures from those of CVD SLG. The growth mechanism of BLG is found to be related to catalystic activity of copper (Cu)surface, which is determined by purity of Cu foils employed in CVD process. Our work showsthat strongly coupled or even AB stacked BLG can be grown on Cu foils in large scale, which isof particular importance for device applications based on their split electronic bands

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