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Source author record

Chunxiao Cong

Chunxiao Cong appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.opticsphysics.chem-ph

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Published work

12 published item(s)

preprint2015arXiv

Controlled Synthesis of Organic/Inorganic van der Waals Solid for Tunable Light-matter Interactions

Van der Waals (vdW) solids, as a new type of artificial materials that consist of alternating layers bonded by weak interactions, have shed light on fascinating optoelectronic device concepts. As a result, a large variety of vdW devices have been engineered via layer-by-layer stacking of two-dimensional materials, although shadowed by the difficulties of fabrication. Alternatively, direct growth of vdW solids has proven as a scalable and swift way, highlighted by the successful synthesis of graphene/h-BN and transition metal dichalcogenides (TMDs) vertical heterostructures from controlled vapor deposition. Here, we realize high-quality organic and inorganic vdW solids, using methylammonium lead halide (CH3NH3PbI3) as the organic part (organic perovskite) and 2D inorganic monolayers as counterparts. By stacking on various 2D monolayers, the vdW solids behave dramatically different in light emission. Our studies demonstrate that h-BN monolayer is a great complement to organic perovskite for preserving its original optical properties. As a result, organic/h-BN vdW solid arrays are patterned for red light emitting. This work paves the way for designing unprecedented vdW solids with great potential for a wide spectrum of applications in optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetic Oscillation of Optical Phonon in ABA- and ABC-Stacked Trilayer Graphene

We present a comparative measurement of the G-peak oscillations of phonon frequency, Raman intensity and linewidth in the Magneto-Raman scattering of optical E2g phonons in mechanically exfoliated ABA- and ABC-stacked trilayer graphene (TLG). Whereas in ABA-stacked TLG, we observe magnetophonon oscillations consistent with single-bilayer chiral band doublets, the features are flat for ABC-stacked TLG up to magnetic fields of 9 T. This suppression can be attributed to the enhancement of band chirality that compactifies the spectrum of Landau levels and modifies the magnetophonon resonance properties. The drastically different coupling behaviour between the electronic excitations and the E2g phonons in ABA- and ABC-stacked TLG reflects their different electronic band structures and the electronic Landau level transitions and thus can be another way to determine the stacking orders and to probe the stacking-order-dependent electronic structures. In addition, the sensitivity of the magneto-Raman scattering to the particular stacking order in few layers graphene highlights the important role of interlayer coupling in modifying the optical response properties in van der Waals layered materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 nm with a growth rate of ~1 nm/min or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 um/min, thereby promoting graphene domains up to 20 um in size to be synthesized via chemical vapor deposition on hexagonal boron nitride. Hall measurements show that the mobility of the sample reaches 20,000 cm2/Vs at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials - A general bond polarizability model

2D layered materials have recently attracted tremendous interest due to their fascinating properties and potential applications. The interlayer interactions are much weaker than the intralayer bonds, allowing the as-synthesized materials to exhibit different stacking sequences (e.g. ABAB, ABCABC), leading to different physical properties. Here, we show that regardless of the space group of the 2D material, the Raman frequencies of the interlayer shear modes observed under the typical configuration blue shift for AB stacked materials, and red shift for ABC stacked materials, as the number of layers increases. Our predictions are made using an intuitive bond polarizability model which shows that stacking sequence plays a key role in determining which interlayer shear modes lead to the largest change in polarizability (Raman intensity); the modes with the largest Raman intensity determining the frequency trends. We present direct evidence for these conclusions by studying the Raman modes in few layer graphene, MoS2, MoSe2, WSe2 and Bi2Se3, using both first principles calculations and Raman spectroscopy. This study sheds light on the influence of stacking sequence on the Raman intensities of intrinsic interlayer modes in 2D layered materials in general, and leads to a practical way of identifying the stacking sequence in these materials.

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preprint2014arXiv

Evolution of Raman G and G'(2D) Modes in Folded Graphene Layers

Bernal- and non-Bernal-stacked graphene layers have been systematically studied by Raman imaging and spectroscopy. Two dominant Raman modes, G and G' (or 2D) of folded graphene layers exhibit three types of spectral features when interlayer lattice mismatches, defined by a rotational angle varies. Among these folded graphene layers, the most interesting one is the folded graphene layers that present an extremely strong G mode enhanced by a twist-induced Van Hove singularity. The evolution of Raman G and G' modes of such folded graphene layers are probed by changing the excitation photon energies. For the first time, doublet splitting of the G' mode in folded double-layer (1 + 1) and of the G mode in folded tetra-layer (2 + 2) graphene are clearly observed and discussed. The G' mode splitting in folded double-layer graphene is attributed to the coexistence of inner and outer scattering processes and the trigonal warping effect as well as further downwards bending of the inner dispersion branch at visible excitation energy. While the two peaks of the G mode in folded tetra-layer graphene are assigned to Raman-active mode (E2g) and lattice mismatch activated infrared-active mode (E1u), which is further verified by the temperature-dependent Raman measurements. Our study provides a summary and thorough understanding of Raman spectra of Bernal- and non-Bernal-stacked graphene layers and further demonstrates the versatility of Raman spectroscopy for exploiting electronic band structures of graphene layers.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Resonant Low Frequency Interlayer Shear Modes in Folded Graphene Layers

Naturally or artificially stacking extra layers on single layer graphene (SLG) forms few-layer graphene (FLG), which has attracted tremendous attention owing to its exceptional properties inherited from SLG and new features generated by introducing extra freedom. In FLG, shear modes play a critical role in understanding its distinctive properties. Unfortunately, energies of shear modes are so close to excitation lasers to be fully blocked by a Rayleigh rejecter. This greatly hinders investigations of shear modes in FLG. Here, we demonstrate dramatically enhanced shear modes in properly folded FLG. Benefiting from the extremely strong signals, for the first time, enhancement mechanism, vibrational symmetry, anharmonicity and electron-phonon coupling (EPC) of shear modes are uncovered through studies of two-dimensional (2D) Raman mapping, polarization- and temperature-dependent Raman spectroscopy. This work complements Raman studies of graphene layers, and paves an efficient way to exploit low frequency shear modes of FLG and other 2D layered materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Synthesis and optical properties of large-scale single-crystalline two-dimensional semiconductor WS2 monolayer from chemical vapor deposition

Two-dimensional (2D) transition metal dichalcogenides (TMDs), especially MoS2 and WS2 recently attract extensive attentions due to their rich physics and great potential applications. Superior to graphene, MS2 (M = Mo/W) monolayers have a native direct energy gap in visible frequency range. This promises great future of MS2 for optoelectronics. To exploit properties and further develop more applications, producing large-scale single crystals of MS2 by a facile method is highly demanded. Here, we report the synthesis of large-scale triangular single crystals of WS2 monolayer from a chemical vapor deposition process and systematic optical studies of such WS2 monolayers. The observations of high yield of light emission and valley-selective circular dichroism experimentally evidence the high optical quality of the WS2 monolayers. This work paves the road to fabricate large-scale single crystalline 2D semiconductors and study their fundamentals. It must be very meaningful for exploiting great potentials of WS2 for future optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Direct Observation of Inner and Outer G' Band Double-resonance Raman Scattering in Free Standing Graphene

In contrary to the widely reported single and symmetric peak feature of G' (or 2D) band in Raman spectrum of graphene, we herein report the observation of splitting in G' band in free standing graphene. Our experimental findings provide a direct and strong support for the previous theoretical prediction that the coexistence of the outer and inner processes in the doubleresonance Raman scattering would cause the splitting of G' mode. Our investigation of the influence of trigonal warping effect on the spectral features of G' subbands further verified the theoretical interpretation established on the anisotropic electronic structure of graphene.

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preprint2011arXiv

Hysteresis of Electronic Transport in Graphene Transistors

Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two different kinds of hysteresis in their electrical characteristics. Charge transfer causes a positive shift in the gate voltage of the minimum conductance, while capacitive gating can cause the negative shift of conductance with respect to gate voltage. The positive hysteretic phenomena decay with an increase of the number of layers in graphene flakes. Self-heating in helium atmosphere significantly removes adsorbates and reduces positive hysteresis. We also observed negative hysteresis in graphene devices at low temperature. It is also found that an ice layer on/under graphene has much stronger dipole moment than a water layer does. Mobile ions in the electrolyte gate and a polarity switch in the ferroelectric gate could also cause negative hysteresis in graphene transistors. These findings improved our understanding of the electrical response of graphene to its surroundings. The unique sensitivity to environment and related phenomena in graphene deserve further studies on nonvolatile memory, electrostatic detection and chemically driven applications.

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preprint2010arXiv

Raman study on G mode of graphene for determination of edge orientation

We report a confocal Raman study on edges of single layer graphene. It is found that edge orientations could be identified by G mode besides D mode. We observe that G mode at edges of single layer graphene exhibits polar behaviors and different edges like zigzag- or armchair-dominated responses differently to the polarization of the incident laser. Moreover, G mode shows stiffening at zigzag-dominated edges, while it is softened at armchair- dominated ones. Our observations are in good agreement with recent theory (K. Sasaki, et al., J. Phys. Soc. Jpn. 79, 044603) and could be well explained by the unique properties of pseudospin at graphene edges, which lead to asymmetry of Raman active modes and non-adiabatic processes (Kohn Anomaly) at different types of edges. This work could be useful for further study on the properties of graphene edge and development of graphene-based devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Second-order Overtone and Combinational Raman Modes of Graphene Layers in the Range of 1690 cm-1 to 2150 cm-1

Though graphene has been intensively studied by Raman spectroscopy, in this letter, we report a study of second-order overtone and combinational Raman modes in an unexplored range of 1690-2150 cm-1 in nonsuspended commensurate (AB-stacked), incommensurate (folded) and suspended graphene layers. Based on the double resonance theory, four dominant modes in this range have been assigned as 2oTO (M band), iTA+LO, iTO+LA and LO+LA. Differing to AB-stacked bilayer graphene or few layer graphene, the M band disappears in single layer graphene. Systematic analysis reveals that interlayer interaction is essential for the presence (or absence) of M band whereas the substrate has no effect on this. Dispersive behaviors of these "new" Raman modes in graphene have been probed by the excitation energy dependent Raman spectroscopy. It is found that the appearance of the M band strictly relies on the AB stacking, which could be a fingerprint of AB-stacked bilayer graphene. This work expands the unique and powerful abilities of Raman spectroscopy on study of graphene and provides another effective way to probe phonon dispersion, electron-phonon coupling, and to exploit electronic band structure of graphene layers.

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preprint2010arXiv

Stacking Dependent Optical Conductivity of Bilayer Graphene

The optical conductivities of graphene layers are strongly dependent on their stacking orders. Our first-principle calculations show that while the optical conductivities of single layer graphene (SLG) and bilayer graphene (BLG) with Bernal stacking are almost frequency independent in the visible region, the optical conductivity of twisted bilayer graphene (TBG) is frequency dependent, giving rise to additional absorption features due to the band folding effect. Experimentally, we obtain from contrast spectra the optical conductivity profiles of BLG with different stacking geometries. Some TBG samples show additional features in their conductivity spectra in full agreement with our calculation results, while a few samples give universal conductivity values similar to that of SLG. We propose those variations of optical conductivity spectra of TBG samples originate from the difference between the commensurate and incommensurate stackings. Our results reveal that the optical conductivity measurements of graphene layers indeed provide an efficient way to select graphene films with desirable electronic and optical properties, which would great help the future application of those large scale misoriented graphene films in photonic devices.

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