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Jingyi Zhu

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cond-mat.mtrl-sci math.OC

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preprint2020arXiv

Error Bounds and Applications for Stochastic Approximation with Non-Decaying Gain

This work analyzes the stochastic approximation algorithm with non-decaying gains as applied in time-varying problems. The setting is to minimize a sequence of scalar-valued loss functions $f_k(\cdot)$ at sampling times $τ_k$ or to locate the root of a sequence of vector-valued functions $g_k(\cdot)$ at $τ_k$ with respect to a parameter $θ\in R^p$ . The available information is the noise-corrupted observation(s) of either $f_k(\cdot)$ or $g_k(\cdot)$ evaluated at one or two design points only. Given the time-varying stochastic approximation setup, we apply stochastic approximation algorithms with non-decaying gains, so that the recursive estimate denoted as $\hatθ_k$ can maintain its momentum in tracking the time-varying optimum denoted as $θ_k^*$ . Chapter 3 provides a bound for the root-mean-squared error $\sqrt{E(\|\hatθ_k-θ_k^*\|^2})$ . Overall, the bounds are applicable under a mild assumption on the time-varying drift and a modest restriction on the observation noise and the bias term. After establishing the tracking capability in Chapter 3, we also discuss the concentration behavior of $\hatθ_k$ in Chapter 4. The weak convergence limit of the continuous interpolation of $\hatθ_k$ is shown to follow the trajectory of a non-autonomous ordinary differential equation. Both Chapter 3 and Chapter 4 are probabilistic arguments and may not provide much guidance on the gain-tuning strategies useful for one single experiment run. Therefore, Chapter 5 discusses a data-dependent gain-tuning strategy based on estimating the Hessian information and the noise level. Overall, this work answers the questions "what is the estimate for the dynamical system $θ_k^*$ " and "how much we can trust $\hatθ_k$ as an estimate for $θ_k^*$ ."

preprint2016arXiv

Defect-engineered graphene for bulk supercapacitors with high energy and power densities

The development of high-energy and high-power density supercapacitors (SCs) is critical for enabling next-generation energy storage applications. Nanocarbons are excellent SC electrode materials due to their economic viability, high-surface area, and high stability. Although nanocarbons have high theoretical surface area and hence high double layer capacitance, the net amount of energy stored in nanocarbon-SCs is much below theoretical limits due to two inherent bottlenecks: i) their low quantum capacitance and ii) limited ion-accessible surface area. Here, we demonstrate that defects in graphene could be effectively used to mitigate these bottlenecks by drastically increasing the quantum capacitance and opening new channels to facilitate ion diffusion in otherwise closed interlayer spaces. Our results support the emergence of a new energy paradigm in SCs with 250% enhancement in double layer capacitance beyond the theoretical limit. Furthermore, we demonstrate prototype defect engineered bulk SC devices with energy densities 500% higher than state-of-the-art commercial SCs without compromising the power density.

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