Researcher profile

Jingdi Lu

Jingdi Lu contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

Symmetry-engineered and electrically tunable in-plane anomalous Hall effect in oxide heterostructures

The family of Hall effects has long served as a premier probe of how symmetry, magnetic order, and topology intertwine in solids. Recently, the in-plane anomalous Hall effect (IP-AHE), a transverse Hall response driven by in-plane magnetization, has emerged as a distinct member of this family, offering innovative spintronic functionalities and illuminating intricate interplay between mirror-symmetry breaking and in-plane magnetic order. However, practical routes to deterministically and reversibly control IP-AHE remain limited. Here, we establish a symmetry-engineered IP-AHE platform, CaRuO3/La2/3Ca1/3MnO3/CaRuO3 heterostructure on NdGaO3(110), that turns strict mirror-symmetry breaking constraints into effective tuning knobs. IP-AHE in these epitaxial trilayers unambiguously couples to the CaRuO3-buffer-induced mirror-symmetry breaking and faithfully reproduces the ferromagnetic hysteresis. Ionic liquid gating further enables reversible reconfigurations of the symmetry breaking, thereby achieving electrical modulation and ON/OFF switching of IP-AHE. This highly tunable IP-AHE platform opens pathways for exploring nontrivial magnetic order and developing programmable Hall functionalities in planar geometries.

preprint2020arXiv

Electric-field-controllable high-spin SrRuO3 driven by a solid ionic junction

Controlling magnetism and spin structures in strongly correlated systems by using electric field is of fundamental importance but challenging. Here, a high-spin ruthenate phase is achieved via a solid ionic chemical junction at SrRuO3/SrTiO3 interface with distinct formation energies and diffusion barriers of oxygen vacancies, analogue to electronic band alignment in semiconductor heterojunction. Oxygen vacancies trapped within this interfacial SrRuO3 reconstruct Ru-4d electronic structure and orbital occupancy, leading to an enhanced magnetic moment. Furthermore, an interfacial magnetic phase can be switched reversibly by electric-field-rectifying oxygen migration in a solid-state ionic gating device, providing a framework for atomic design of functionalities in strongly correlated oxides using a way of solid chemistry.