Source author record

Jin Sung Kim

Jin Sung Kim appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

4works
5topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2021arXiv

Intentional Deep Overfit Learning (IDOL): A Novel Deep Learning Strategy for Adaptive Radiation Therapy

In this study, we propose a tailored DL framework for patient-specific performance that leverages the behavior of a model intentionally overfitted to a patient-specific training dataset augmented from the prior information available in an ART workflow - an approach we term Intentional Deep Overfit Learning (IDOL). Implementing the IDOL framework in any task in radiotherapy consists of two training stages: 1) training a generalized model with a diverse training dataset of N patients, just as in the conventional DL approach, and 2) intentionally overfitting this general model to a small training dataset-specific the patient of interest (N+1) generated through perturbations and augmentations of the available task- and patient-specific prior information to establish a personalized IDOL model. The IDOL framework itself is task-agnostic and is thus widely applicable to many components of the ART workflow, three of which we use as a proof of concept here: the auto-contouring task on re-planning CTs for traditional ART, the MRI super-resolution (SR) task for MRI-guided ART, and the synthetic CT (sCT) reconstruction task for MRI-only ART. In the re-planning CT auto-contouring task, the accuracy measured by the Dice similarity coefficient improves from 0.847 with the general model to 0.935 by adopting the IDOL model. In the case of MRI SR, the mean absolute error (MAE) is improved by 40% using the IDOL framework over the conventional model. Finally, in the sCT reconstruction task, the MAE is reduced from 68 to 22 HU by utilizing the IDOL framework.

preprint2015arXiv

Feasibility Study of Neutron Dose for Real Time Image Guided Proton Therapy: A Monte Carlo Study

Two full rotating gantry with different nozzles (Multipurpose nozzle with MLC, Scanning Dedicated nozzle) with conventional cyclotron system is installed and under commissioning for various proton treatment options at Samsung Medical Center in Korea. The purpose of this study is to investigate neutron dose equivalent per therapeutic dose, H/D, to x-ray imaging equipment under various treatment conditions with monte carlo simulation. At first, we investigated H/D with the various modifications of the beam line devices (Scattering, Scanning, Multi-leaf collimator, Aperture, Compensator) at isocenter, 20, 40, 60 cm distance from isocenter and compared with other research groups. Next, we investigated the neutron dose at x-ray equipments used for real time imaging with various treatment conditions. Our investigation showed the 0.07 ~ 0.19 mSv/Gy at x-ray imaging equipments according to various treatment options and intestingly 50% neutron dose reduction effect of flat panel detector was observed due to multi- leaf collimator during proton scanning treatment with multipurpose nozzle. In future studies, we plan to investigate experimental measurement of neutron dose and validation of simulation data for x-ray imaging equipment with additional neutron dose reduction method.

preprint2014arXiv

Dipole-containing encapsulation on WSe2/MoS2 nanoflake p-n diode with glass substrate toward an ideal performance

We report on p-WSe2/n-MoS2 heterojunction diodes fabricated both on glass and SiO2/p+-Si substrates. The electrostatic performance and stability of our diode were successfully improved toward ideal current-voltage (I-V) behavior by adopting the fluoropolymer CYTOP encapsulation layer on top of our diode; reduction of reverse-bias leakage current and enhancement of forward-bias on current were achieved along with good aging stability in air ambient. Such performance improvement is attributed to the intrinsic properties of CYTOP materials with C-F bonds whose strong dipole moment causes hole accumulation, while the strong hydrophobicity of CYTOP would prevent ambient molecule adsorption on 2D semiconductor surface. Moreover, fabricated on glass, our p-n diode displayed good dynamic rectification at over 100 Hz, without displacement current-induced signal overshoot/undershoot which was shown in the other diode on SiO2/p+-Si. Little I-V hysteresis in our diode is another benefit of glass substrate. We conclude that our CYTOP-encapsulated WSe2/MoS2 p-n diode on glass is a high performance and ambient stable 2D nanodevice toward future advanced electronics.

preprint2014arXiv

Extremely high mobility over 5000 cm2/Vs obtained from MoS2 nanosheet transistor with NiOx Schottky gate

Molybdenum disulfide (MoS2) nanosheet, one of two dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors including graphene. However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal-insulator-semiconductor field effect transistors (MISFETs), where the transport behavior of conducting carriers located at the insulator/MoS2 interface is unavoidably interfered by the interface traps and gate voltage. Here, we for the first time report MoS2-based metal semiconductor field-effect transistors (MESFETs) with NiOx Schottky electrode, where the maximum mobilities or carrier transport behavior of the Schottky devices may hardly be interfered by on-state gate field. Our MESFETs with single-, double-, and triple-layered MoS2 respectively demonstrate high mobilities of 6000, 3500, and 2800 cm2/Vs at a certain low threshold voltage of -1 ~ -2 V. The thickness-dependent mobility difference in MESFETs was theoretically explained with electron scattering reduction mechanisms.