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Jin Dong Song

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physics.optics cond-mat.mes-hall quant-ph physics.app-ph cond-mat.mtrl-sci

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preprint2022arXiv

Coherence in Cooperative Photon Emission from Indistinguishable Quantum Emitters

Photon-mediated interactions between atomic systems can arise via coupling to a common electromagnetic mode or by quantum interference. Here, we probe the role of coherence in cooperative emission arising from two distant but indistinguishable solid-state emitters because of path erasure. The primary signature of cooperative emission, the emergence of "bunching" at zero delay in an intensity correlation experiment, is used to characterise the indistinguishability of the emitters, their dephasing, and the degree of correlation in the joint system that can be coherently controlled. In a stark departure from a pair of uncorrelated emitters, in Hong-Ou-Mandel type interference measurements we observe photon statistics from a pair of indistinguishable emitters resembling that of a weak coherent state from an attenuated laser. Our experiments establish techniques to control and characterize cooperative behavior between matter qubits using the full quantum optics toolbox, a key step toward realizing large-scale quantum photonic networks.

preprint2022arXiv

Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters

Being able to combine different materials allows taking advantage of different properties and device engineering that cannot be found or exploited within a single material system. In quantum nano-photonics, one might want to increase the device functionalities by, for instance, combining efficient classical and quantum light emission available in III-V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate and broadband reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes, with dimensions up to about 260$μ$m x 80$μ$m, containing InAs quantum dots, onto a gold substrate. We show that the presence of a back reflector combined with the etching of micro-pillars significantly increases the extraction efficiency of quantum light, reaching photon fluxes, from a single quantum dot line, exceeding 8 x 10$^5$ photons per second, which is four times higher than the highest count rates measured, on the same chip, from emitters outside the pillars. Given the versatility and the ease of the process, this technique opens the path to the realisation of hybrid quantum and nano-photonic devices that can combine virtually any material that can be undercut to realise free-standing membranes that are then transferred onto any host substrate, without specific compatibility issues and/or requirements.

preprint2021arXiv

Broadband, efficient extraction of quantum light by a photonic device comprised of a metallic nano-ring and a gold back reflector

To implement quantum light sources based on quantum emitters in applications, it is desirable to improve the extraction efficiency of single photons. In particular controlling the directionality and solid angle of the emission are key parameters, for instance, to couple single photons into optical fibers and send the information encoded in quantum light over long distances, for quantum communication applications. In addition, fundamental studies of the radiative behavior of quantum emitters, including studies of coherence and blinking, benefit from such improved photon collection. Quantum dots grown via Stranski-Krastanov technique have shown to be good candidates for bright, coherent, indistinguishable quantum light emission. However, one of the challenges associated with these quantum light sources arises from the fact that the emission wavelengths can vary from one emitter to the other. To this end, broadband light extractors that do not rely on high-quality factor optical cavities would be desirable, so that no tuning between the quantum dot emission wavelength and the resonator used to increase the light extraction is needed. Here, we show that metallic nano-rings combined with gold back reflectors increase the collection efficiency of single photons and we study the statistics of this effect when quantum dots are spatially randomly distributed within the nano-rings. We show an average increase in the brightness of about a factor 7.5, when comparing emitters within and outside the nano-rings in devices with a gold back reflector, we measure count rates exceeding 7 x 10^6 photons per second and single photon purities as high as 85% +/- 1%. These results are important steps towards the realisation of scalable, broadband, easy to fabricate sources of quantum light for quantum communication applications.

preprint2020arXiv

Control of single quantum emitters in bio-inspired aperiodic nano-photonic devices

Enhancing light-matter interactions on a chip is of paramount importance to study nano- and quantum optics effects and to realise integrated devices, for instance, for classical and quantum photonics, sensing and energy harvesting applications. Engineered nano-devices enable the efficient confinement of light and the control of the spontaneous emission dynamics of single emitters, which is crucial for cavity quantum electrodynamics experiments and for the development of classical and quantum light sources. Here, we report on the demonstration of enhanced light-matter interaction and Purcell effects on a chip, based on bio-inspired aperiodic devices fabricated in silicon nitride and gallium arsenide. Internal light sources, namely optically-active defect centers in silicon nitride and indium arsenide single quantum dots, are used to image and characterize, by means of micro-photoluminescence spectroscopy, the individual optical modes confined by photonic membranes with Vogel-spiral geometry. By studying the statistics of the measured optical resonances, in partnership with rigorous multiple scattering theory, we observe log-normal distributions and report quality factors with values as high as 2201+/-443. Building on the strong light confinement achieved in this novel platform, we further investigate the coupling of single semiconductor quantum dots to the confined optical modes. Our results show cavity quantum electrodynamics effects providing strong modifications of the spontaneous emission decay of single optical transitions: we show control of the decay lifetime of single emitters with a dynamic range reaching 20. Our findings improve the understanding of the fundamental physical properties of light-emitting Vogel-spiral systems, show their application to quantum photonic devices, and form the basis for the further development of classical and quantum active devices on a chip.

preprint2015arXiv

Coherent coupling between radio frequency, optical, and acoustic waves in piezo-optomechanical circuits

The interaction of optical and mechanical modes in nanoscale optomechanical systems has been widely studied for applications ranging from sensing to quantum information science. Here, we develop a platform for cavity optomechanical circuits in which localized and interacting 1550 nm photons and 2.4 GHz phonons are combined with photonic and phononic waveguides. Working in GaAs facilitates manipulation of the localized mechanical mode either with a radio frequency field through the piezo-electric effect, or optically through the strong photoelastic effect. We use this to demonstrate a novel acoustic wave interference effect, analogous to coherent population trapping in atomic systems, in which the coherent mechanical motion induced by the electrical drive can be completely cancelled out by the optically-driven motion. The ability to manipulate cavity optomechanical systems with equal facility through either photonic or phononic channels enables new device and system architectures for signal transduction between the optical, electrical, and mechanical domains.

preprint2015arXiv

Deterministic photon-emitter coupling in chiral photonic circuits

The ability to engineer photon emission and photon scattering is at the heart of modern photonics applications ranging from light harvesting, through novel compact light sources, to quantum-information processing based on single photons. Nanophotonic waveguides are particularly well suited for such applications since they confine photon propagation to a 1D geometry thereby increasing the interaction between light and matter. Adding chiral functionalities to nanophotonic waveguides lead to new opportunities enabling integrated and robust quantum-photonic devices or the observation of novel topological photonic states. In a regular waveguide, a quantum emitter radiates photons in either of two directions, and photon emission and absorption are reverse processes. This symmetry is violated in nanophotonic structures where a non-transversal local electric field implies that both photon emission and scattering may become directional. Here we experimentally demonstrate that the internal state of a quantum emitter determines the chirality of single-photon emission in a specially engineered photonic-crystal waveguide. Single-photon emission into the waveguide with a directionality of more than 90\% is observed under conditions where practically all emitted photons are coupled to the waveguide. Such deterministic and highly directional photon emission enables on-chip optical diodes, circulators operating at the single-photon level, and deterministic quantum gates. Based on our experimental demonstration, we propose an experimentally achievable and fully scalable deterministic photon-photon CNOT gate, which so far has been missing in photonic quantum-information processing where most gates are probabilistic.

preprint2014arXiv

Decay dynamics and exciton localization in large GaAs quantum dots grown by droplet epitaxy

We investigate the optical emission and decay dynamics of excitons confined in large strain-free GaAs quantum dots grown by droplet epitaxy. From time-resolved measurements combined with a theoretical model we show that droplet-epitaxy quantum dots have a quantum efficiency of about 75% and an oscillator strength between 8 and 10. The quantum dots are found to be fully described by a model for strongly-confined excitons, in contrast to the theoretical prediction that excitons in large quantum dots exhibit the so-called giant oscillator strength. We attribute these findings to localized ground-state excitons in potential minima created by material intermixing during growth. We provide further evidence for the strong-confinement regime of excitons by extracting the size of electron and hole wavefunctions from the phonon-broadened photoluminescence spectra. Furthermore, we explore the temperature dependence of the decay dynamics and, for some quantum dots, observe a pronounced reduction in the effective transition strength with temperature. We quantify and explain these effects as being an intrinsic property of large quantum dots owing to thermal excitation of the ground-state exciton. Our results provide a detailed understanding of the optical properties of large quantum dots in general, and of quantum dots grown by droplet epitaxy in particular.

preprint2014arXiv

Moving boundary and photoelastic coupling in GaAs optomechanical resonators

Chip-based cavity optomechanical systems are being considered for applications in sensing, metrology, and quantum information science. Critical to their development is an understanding of how the optical and mechanical modes interact, quantified by the coupling rate $g_{0}$. Here, we develop GaAs optomechanical resonators and investigate the moving dielectric boundary and photoelastic contributions to $g_{0}$. First, we consider coupling between the fundamental radial breathing mechanical mode and a 1550 nm band optical whispering gallery mode in microdisks. For decreasing disk radius from $R=5$ $μ$m to $R=1$ $μ$m, simulations and measurements show that $g_{0}$ changes from being dominated by the moving boundary contribution to having an equal photoelastic contribution. Next, we design and demonstrate nanobeam optomechanical crystals in which a $2.5$ GHz mechanical breathing mode couples to a 1550 nm optical mode predominantly through the photoelastic effect. We show a significant (30 $\%$) dependence of $g_{0}$ on the device's in-plane orientation, resulting from the difference in GaAs photoelastic coefficients along different crystalline axes, with fabricated devices exhibiting $g_{\text{0}}/2π$ as high as 1.1 MHz for orientation along the [110] axis. GaAs nanobeam optomechanical crystals are a promising system which can combine the demonstrated large optomechanical coupling strength with additional functionality, such as piezoelectric actuation and incorporation of optical gain media.

preprint2013arXiv

Fabrication and tuning of plasmonic optical nanoantennas around droplet epitaxy quantum dots by cathodoluminescence

We use cathodoluminescence to locate droplet epitaxy quantum dots with a precision $\lesssim$ nm before fabricating nanoantennas in their vicinity by electron-beam lithography. Cathodoluminescence is further used to evidence the effect of the antennas as a function of their length on the light emitted by the dot. Experimental results are in good agreement with numerical simulations of the structures.

preprint2012arXiv

Magnetic field dependent impact ionization in InSb

Carrier generation by impact ionization and subsequent recombination under the influence of magnetic field has been studied for InSb slab. A simple analytic expression for threshold electric field as a function of magnetic field is proposed. Impact ionization is suppressed by magnetic field. However, surface recombination is dependent on the polarity of magnetic field: strengthened in one direction and suppressed on the opposite direction. The former contributes quadratic increase to threshold electric field, and the latter gives additional linear dependence on magnetic field. Based on this study, electrical switching devices driven by magnetic field can be designed.