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Jihang Zhu

Jihang Zhu contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2025arXiv

Superconductivity from phonon-mediated retardation in a single-flavor metal

We study phonon-mediated pairings in a single-flavor metal with a tunable Berry curvature. In the absence of Berry curvature, we discover an unexpected possibility: $p$-wave superconductivity emerging purely from the retardation effect, while the static BCS approximation fails to predict its existence. The gap function exhibits sign-change behavior in frequency (owing to the dynamical structure of the phonon-mediated interaction in the $p$-wave channel), and $T_c$ obeys a BCS-like scaling. We further show that the Berry curvature stabilizes the chiral $p$-wave superconductivity and can induce transitions to higher-angular-momentum pairings. Our results establish that the phonon-mediated mechanism is a viable pairing candidate in single-flavor systems, such as the quarter-metal superconductivity observed in rhombohedral graphene multilayers.

preprint2021arXiv

Fabry-Pérot cavities and quantum dot formation at gate-defined interfaces in twisted double bilayer graphene

The rich and electrostatically tunable phase diagram exhibited by moiré materials has made them a suitable platform for hosting single material multi-purpose devices. To engineer such devices, understanding electronic transport and localization across electrostatically defined interfaces is of fundamental importance. Little is known, however, about how the interplay between the band structure originating from the moiré lattice and electric potential gradients affects electronic confinement. Here, we electrostatically define a cavity across a twisted double bilayer graphene sample. We observe two kinds of Fabry-Pérot oscillations. The first, independent of charge polarity, stems from confinement of electrons between dispersive-band/flat-band interfaces. The second arises from junctions between regions tuned into different flat bands. When tuning the out-of-plane electric field across the device, we observe Coulomb blockade resonances in transport, an indication of strong electronic confinement. From the gate, magnetic field and source-drain voltage dependence of the resonances, we conclude that quantum dots form at the interfaces of the Fabry-Pérot cavity. Our results constitute a first step towards better understanding interfacial phenomena in single crystal moiré devices.

preprint2021arXiv

Moiré Commensurability and the Quantum Anomalous Hall Effect in Twisted Bilayer Graphene on Hexagonal Boron Nitride

The quantum anomalous Hall (QAH) effect is sometimes observed in twisted bilayer graphene (tBG) when it is nearly aligned with an encapsulating hexagonal boron nitride (hBN) layer. We propose that the appearance or absence of the QAH effect in individual devices could be related to commensurability between the graphene/graphene and graphene/hBN moiré patterns. We identify a series of points in the $(θ_{\rm GG},θ_{\rm GBN})$ twist-angle space at which the two moiré patterns are commensurate, allowing moiré band theory to be applied, and show that the band Chern numbers are in this case sensitive to a rigid in-plane hBN displacement. Given this property, we argue that the QAH effect is likely only when i) the $(θ_{\rm GG},θ_{\rm GBN})$ twist-angle-pair is close enough to a commensurate point that the two moiré patterns yield a supermoiré pattern with a sufficiently long length scale, and ii) the supermoiré has a percolating topologically non-trivial QAH phase. For twist angles far from commensurability, the hBN layer acts as a source of disorder that can destroy the QAH effect. Our proposal can explain a number of current experimental observations. Further experimental studies that can test this proposal more directly are suggested.