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Jien Cao

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2 published item(s)

preprint2005arXiv

Electrical Contacts to Carbon Nanotubes Down to 1nm in Diameter

Rhodium (Rh) is found similar to Palladium (Pd) in making near-ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d > ~ 1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S-SWNTs) with d < ~ 1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors (FETs) and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters < ~ 1.0 nm possibly due to tunnel barriers.

preprint2005arXiv

Electron Transport in Very Clean, As-Grown Suspended Carbon Nanotubes

Single walled carbon nanotubes (SWNT) have displayed a wealth of quantum transport phenomena thus far. Defect free, unperturbed SWNTs with wellbehaved or tunable metal contacts are important to probing the intrinsic electrical properties of nanotubes. Meeting these conditions experimentally is nontrivial due to numerous disorder and randomizing factors. Here we show that ~ 1 um long fully suspended SWNTs grown-in-place between metal contacts afford SWNT devices exhibiting well-defined characteristics over much wider energy ranges than nanotubes pinned on substrates. Various low temperature transport regimes in true-metallic, small and large bandgap semiconducting nanotubes are observed including quantum states shell-filling, -splitting and -crossing in magnetic fields for medium conductance devices. The clean transport data reveals a correlation between the contact junction resistance and the various transport regimes in SWNT devices. Further, we show that electrical transport data can be used to probe the band structures of nanotubes including nonlinear band dispersion.