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Jie Jian

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Published work

4 published item(s)

preprint2022arXiv

Effects of network topology and trait distribution on collective decision making

Social networks play an important role in analyzing the impact of individual-level interactions on societal or economic outcomes. We model interactive decision making for a community of individuals with different traits, represented by a social network with trait-attributed nodes. We develop a deterministic process generating a sequence of choices for each individual based on a trait-attributed social network, initial choices of individuals and a set of predetermined trait-dependent rules for making decisions. The object of interest is the sequence of cumulative sum of choices over all individuals, which we call the cumulative sequence and consider as an index of collective decisions. We observe that, in a time period, a cumulative sequence can be unpredictable or predictable showing a repeated pattern either escalating to an extreme or constantly oscillating. We consider that predictable cumulative sequences represent unstable collective decisions of communities either extremizing or internally conflicting, while unpredictable cumulative sequences show stable changes. We analyze the effects of network topology and trait distribution on the probability of cumulative sequences being predictable, escalating and oscillating by simulations. Our findings include that unstable collective decisions are more probable as network density increases, that centralized networks are more likely to have unstable collective decisions and that networks with excessively clustered or scattered conformists and rebels tend to produce unstable cumulative sequences. We discuss the potential of the model as a framework for studying individuals with different traits on a social network directly and indirectly interacting in decision making.

preprint2022arXiv

Two Gaussian regularization methods for time-varying networks

We model time-varying network data as realizations from multivariate Gaussian distributions with precision matrices that change over time. To facilitate parameter estimation, we require not only that each precision matrix at any given time point be sparse, but also that precision matrices at neighboring time points be similar. We accomplish this with two different algorithms, by generalizing the elastic net and the fused LASSO, respectively. Our main focuses are efficient computational algorithms and convenient degree-of-freedom formulae for choosing tuning parameters. We illustrate our methods with two simulation studies. By applying them to an fMRI data set, we also detect some interesting differences in brain connectivity between healthy individuals and ADHD patients.

preprint2020arXiv

A Ferroelectric Semiconductor Field-Effect Transistor

Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application. Here we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide (α-In2Se3), is used as the channel material in the device. α-In2Se3 was chosen due to its appropriate bandgap, room temperature ferroelectricity, ability to maintain ferroelectricity down to a few atomic layers, and potential for large-area growth. A passivation method based on the atomic-layer deposition of aluminum oxide (Al2O3) was developed to protect and enhance the performance of the transistors. With 15-nm-thick hafnium oxide (HfO2) as a scaled gate dielectric, the resulting devices offer high performance with a large memory window, a high on/off ratio of over 108, a maximum on-current of 862 μA μm-1, and a low supply voltage.

preprint2020arXiv

Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires

Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physical and electronic properties than bulk tellurium. Here we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With the approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases. Compared with bare tellurium nanowires on SiO2, nanowires encapsulated in boron nitride nanotubes exhibit a dramatically enhanced current-carrying capacity, with a current density of 1.5*10^8 A cm-2, which exceeds that of most semiconducting nanowires. We also use our tellurium nanowires encapsulated in boron nitride nanotubes to create field-effect transistors that have a diameter of only 2 nm.