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Source author record

Jianqiang Hou

Jianqiang Hou appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.supr-concond-mat.quant-gas

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Published work

4 published item(s)

preprint2016arXiv

Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus

We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the phonon scattering. At cryogenic tempeature the FET mobility increases up to 45,000 $cm^2/Vs$, which is eight times higher compared with the mobility obtained in earlier reports. The unprecedentedly clean h-BN/BP/h-BN heterostructure exhibits Shubnikov-de Haas oscillations and quantum Hall effect with Landau level (LL) filling factors down to v=2 in conventional laboratory magnetic fields. Moreover, carrier density independent effective mass m=0.26 m_0 is measured, and Lande g-factor g=2.47 is reported. Furthermore, an indication for a distinct hole transport behavior with up and down spin orientation is found.

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preprint2016arXiv

Type-controlled Nanodevices Based on Encapsulated Few-layer Black Phosphorus for Quantum Transport

We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum transport nanodevices. Highly stable BP nanodevices with ultrahigh mobility and controllable types are realized through depositing appropriate metal electrodes after conducting a selective etching to the BP encapsulation structure. Chromium and titanium are suitable metal electrodes for BP channels to control the transition from a p-type unipolar property to ambipolar characteristic because of different work functions. Record-high mobilities of 6000 $cm^2V^{-1}s^{-1}$ and 8400 $cm^2V^{-1}s^{-1}$ are respectively obtained for electrons and holes at cryogenic temperatures. High-mobility BP devices enable the investigation of quantum oscillations with an indistinguishable Zeeman effect in laboratory magnetic field.

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preprint2015arXiv

Doping dependence of the critical fluctuation regime in the Fe-based superconductor Ba$_{1-x}$K$_x$Fe$_2$As$_2$

We investigate the importance of superconducting order parameter fluctuations in the 122 family of Fe-based superconductors, using high-resolution specific heat and thermal expansion data of various Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals covering a large range of the phase diagram from the strongly underdoped to the overdoped regime. By applying scaling relations of the 3d-XY and the 3d-Lowest-Landau-Level (3d-LLL) fluctuation models to data measured in different magnetic fields, we demonstrate that a strong increase of the critical fluctuation regime is responsible for the transition broadening in magnetic fields, which is a direct consequence of a magnetic-field-induced finite size effect due to a reduction of the effective dimensionality by a decreasing magnetic length scale related to the mean vortex separation and the confinement of quasiparticles in low Landau levels. The fluctuations are stronger in the underdoped and overdoped regimes and appear to be weakest at optimal doping.

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preprint2015arXiv

Restoration of tetragonal $C_4$ symmetry coexistent with filamentary superconductivity in the pressure induced intermediate phase in the iron-based superconductor Ba$_{1-x}$K$_x$Fe$_2$As$_2$

The hole doped Fe-based superconductors Ba$_{1-x}$A$_x$Fe$_2$As$_2$ (where A=Na or K) show a particular rich phase diagram. It was observed that an intermediate re-entrant tetragonal phase forms within the orthorhombic antiferromagnetically-ordered stripe-type spin density wave state above the superconducting transition [S. Avci et al., Nature Comm. 5, 3845 (2014), A. E. Böhmer et al., arXiv:1412.7038v2]. A similar intermediate phase was reported to appear if pressure is applied to underdoped Ba$_{1-x}$K$_x$Fe$_2$As$_2$ [E. Hassinger et al., Phys. Rev. B 86, 140502(R) (2012)]. Here we report data of the electric resistivity, Hall effect, specific heat, and the thermoelectrical Nernst and Seebeck coefficients measured on a Ba$_{0.85}$K$_{0.15}$Fe$_2$As$_2$ single crystal under pressure up to 5.5 GPa. The data reveals a coexistence of the intermediate phase with filamentary superconductivity. The Nernst coefficient shows a large signature of nematic order that coincides with the stripe-type spin density wave state up to optimal pressure. In the pressure-induced intermediate phase the nematic order is removed, thus confirming that its nature is a re-entrant tetragonal phase.

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