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Jianming Bai

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cond-mat.mtrl-sci cond-mat.stat-mech physics.ins-det

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preprint2025arXiv

Laser, Vacuum, and Gas Reaction Chamber for Operando Measurements at NSLS-II's 28-ID-2

We present a laser reaction chamber that we developed for in-situ/operando X-ray diffraction measurements at the NSLS-II 28-ID-2 XPD (X-Ray Powder Diffraction) beamline. This chamber allows for rapid and dynamic sample heating under specialized gas environments, spanning ambient conditions down to vacuum pressures. We demonstrate the capabilities of this setup through two applications: laser-driven heating in polycrystalline iron oxide and in single crystal WTe2. Our measurements reveal the ability to resolve chemical reaction kinetics over minutes with 1-s time resolution. This setup advances opportunities for in-situ/operando XRD studies in both bulk and single crystal materials.

preprint2012arXiv

A Structural Phase Transition in Ca3Co4O9 Associated with Enhanced High Temperature Thermoelectric Properties

Temperature dependent electrical resistivity, crystal structure and heat capacity measurements reveal a resistivity drop and metal to semiconductor transition corresponding to first order structural phase transition near 400 K in Ca3Co4O9. The lattice parameter c varies smoothly with increasing temperature, while anomalies in the a, b1 and b2 lattice parameters occur at ~ 400 K. Both Ca2CoO3 and CoO2 layers become distorted above ~ 400 K associated with the metal to semiconductor transport behavior change. Resistivity and heat capacity measurements as a function of temperature under magnetic field indicates low spin contribution to this transition. Reduced resistivity associated with this first order phase transition from metallic to semiconducting behavior enhances the thermoelectric properties at high temperatures and points to the metal to semiconductor transition as a mechanism for improved ZT in high temperature thermoelectric oxides.

preprint2009arXiv

Depth-dependent critical behavior in V2H

Using X-ray diffuse scattering, we investigate the critical behavior of an order-disorder phase transition in a defective "skin-layer" of V2H. In the skin-layer, there exist walls of dislocation lines oriented normal to the surface. The density of dislocation lines within a wall decreases continuously with depth. We find that, because of this inhomogeneous distribution of defects, the transition effectively occurs at a depth-dependent local critical temperature. A depth-dependent scaling law is proposed to describe the corresponding critical ordering behavior.