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Jiang-Long Wang

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cond-mat.str-el cond-mat.supr-con cond-mat.mtrl-sci

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preprint2021arXiv

Hole- and electron-injection driven phase transitions in transition metal dichalcogenides and beyond: A unified understanding

The phase transitions among polymorphic two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted increasing attention for their potential in enabling distinct functionalities in the same material for making integrated devices. Electron-injection to TMDs has been proved to be a feasible way to drive structural phase transition from the semiconducting H-phase to the semimetal dT-phase. In this contribution, based on density-functional theory (DFT) calculations, firstly we demonstrate that hole-injection drives the transition of the H-phase more efficiently to the metallic T-phase than to the semimetallic dT-phase for group VI-B TMDs (MoS2, WS2, and MoSe2, etc.). The origin can be attributed to the smaller work function of the T-phase than that of the dT-phase. Our work function analysis can distinguish the T and dT phases quantitatively while it is challenging for the commonly used crystal field splitting analysis. In addition, our analysis provides a unified understanding for both hole- and electron-injection induced phase transitions for 2D materials beyond TMDs, such as the newly synthesized MoSi2N4 family. Moreover, the hole-driven T-phase transition mechanism can explain the recent experiment of WS2 phase transition by hole-doping with yttrium (Y) atoms. Using 1/3 Y-doped WS2 and MoSe2 as examples, we show that the Mo and W valency increases to 5+. These above findings open up an avenue to obtain the metallic T-phase, which expands the possible stable phases of 2D materials.

preprint2015arXiv

Localization and Orbital Selectivity in Iron-Based Superconductors with Cu Substitution

We study an inhomogeneous three-orbital Hubbard model for the Cu-substituted iron pnictides using an extended real-space Green's function method combined with density functional calculations. We find that the onsite interactions of the Cu ions are the principal determinant of whether an electron dopant or a hole dopant is caused by the Cu substitution. It is found that the Cu substitution could lead to a hole doping when its onsite interactions are smaller than a critical value, as opposed to an electron doping when the interactions of Cu ions are larger than the critical value, which may explain why the effects of Cu substitution on the carrier density are entirely different in NaFe$_{1-x}$Cu$_x$As and Ba(Fe$_{1-x}$Cu$_x$)$_2$As$_2$. We also find that the effect of a doping-induced disorder is considerable in the Cu-substituted iron pnictides, and its cooperative effect with electron correlations contributes to the orbital-selective insulating phases in NaFe$_{1-x}$Cu$_x$As and Ba(Fe$_{1-x}$Cu$_x$)$_2$As$_2$.

preprint2013arXiv

Interlayer magnetic frustration driven quantum spin disorder in honeycomb compound In$_{3}$Cu$_{2}$VO$_{9}$

We present electronic and magnetic properties of a honeycomb compound In$_{3}$Cu$_{2}$VO$_{9}$ in this paper. We find that the parent phase is a charge transfer insulator with an energy gap of about 1.5 eV. Singly occupied d$_{3z^{2}-r^{2}}$ electrons of copper ions contribute an $S$ = 1/2 spin, while vanadium ions show nonmagnetism. Oxygen 2$p$ orbitals hybridizing with a small fraction of Cu 3$d$ orbitals dominate the density of states near $E_{F}$. The planar nearest-neighbor, next-nearest-neighbor and interplane superexchange couplings of Cu spins are $J_{1}$ $\approx$ 16.2 meV, $J_{2}$ $\approx$ 0.3 meV and $J_{z}$ $\approx$ 1.2 meV, suggesting a low-dimensional antiferromagnet \cite{Sondhi10}. We propose that the magnetic frustration along the c-axis leads to a quantum spin disorder in In$_{3}$Cu$_{2}$VO$_{9}$, in accordance with the recent experiments. {abstract}