Researcher profile

Jian Ouyang

Jian Ouyang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2024arXiv

Fluid Antennas-Enabled Multiuser Uplink: A Low-Complexity Gradient Descent for Total Transmit Power Minimization

We investigate multiuser uplink communication from multiple single-antenna users to a base station (BS), which is equipped with a movable-antenna (MA) array and adopts zero-forcing receivers to decode multiple signals. We aim to optimize the MAs' positions at the BS, to minimize the total transmit power of all users subject to the minimum rate requirement. After applying transformations, we show that the problem is equivalent to minimizing the sum of each eigenvalue's reciprocal of a matrix, which is a function of all MAs' positions. Subsequently, the projected gradient descent (PGD) method is utilized to find a locally optimal solution. In particular, different from the latest related work, we exploit the eigenvalue decomposition to successfully derive a closed-form gradient for the PGD, which facilitates the practical implementation greatly. We demonstrate by simulations that via careful optimization for all MAs' positions in our proposed design, the total transmit power of all users can be decreased significantly as compared to competitive benchmarks.

preprint2022arXiv

Designing inorganic semiconductors with cold-rolling processability

While metals can be readily processed and reshaped by cold rolling, most bulk inorganic semiconductors are brittle materials that tend to fracture when plastically deformed. Manufacturing thin sheets and foils of inorganic semiconductors is therefore a bottleneck problem, severely restricting their use in flexible electronics applications. It was recently reported that a few single-crystalline two-dimensional van der Waals (vdW) semiconductors, such as InSe, are deformable under compressive stress. Here we demonstrate that intralayer fracture toughness can be tailored via compositional design to make inorganic semiconductors processable by cold rolling. We report systematic ab initio calculations covering a range of van der Waals semiconductors homologous to InSe, leading to material-property maps that forecast trends in both the susceptibility to interlayer slip and the intralayer fracture toughness against cracking. GaSe has been predicted, and experimentally confirmed, to be practically amenable to being rolled to large (three quarters) thickness reduction and length extension by a factor of three. Our findings open a new realm of possibility for alloy selection and design towards processing-friendly group-III chalcogenides for flexible electronic and thermoelectric applications.