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Hangming Zhang

Hangming Zhang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2026arXiv

Breaking Global Self-Attention Bottlenecks in Transformer-based Spiking Neural Networks with Local Structure-Aware Self-Attention

Transformer-based Spiking Neural Networks (SNNs) integrate SNNs with global self-attention and have demonstrated impressive performance. However, existing Transformer-based SNNs suffer from two fundamental limitations. First, they typically employ max pooling layers to reduce the size of feature maps, but the max pooling captures only the strongest response and fails to comprehensively preserve representative regional features. Second, the global self-attention involves all global feature interactions, resulting in computational redundancy and quadratic computational complexity, thus conflicting with the sparse and energy-efficient characteristics of SNNs. To address these challenges, we develop Local Structure-Aware Spiking Transformer (LSFormer), a novel Transformer-based Spiking Neural Network that incorporates Spiking Response Pooling (SPooling) and Local Structure-Aware Spiking Self-Attention (LS-SSA). For the first time, our LSFormer leverages a local dilated window mechanism to capture both local details and long-range dependencies. Experimental results demonstrate that our LSFormer achieves state-of-the-art performance compared to existing advanced Transformer-based SNNs. Notably, on the more challenging static dataset Tiny-ImageNet and neuromorphic dataset N-CALTECH101, LSFormer substantially outperforms state-of-the-art baselines by 4.3\% and 8.6\% in top-1 classification accuracy, respectively. These results highlight the potential of LSFormer to advance energy-efficient spiking models toward practical deployment in large-scale vision applications.

preprint2022arXiv

Designing inorganic semiconductors with cold-rolling processability

While metals can be readily processed and reshaped by cold rolling, most bulk inorganic semiconductors are brittle materials that tend to fracture when plastically deformed. Manufacturing thin sheets and foils of inorganic semiconductors is therefore a bottleneck problem, severely restricting their use in flexible electronics applications. It was recently reported that a few single-crystalline two-dimensional van der Waals (vdW) semiconductors, such as InSe, are deformable under compressive stress. Here we demonstrate that intralayer fracture toughness can be tailored via compositional design to make inorganic semiconductors processable by cold rolling. We report systematic ab initio calculations covering a range of van der Waals semiconductors homologous to InSe, leading to material-property maps that forecast trends in both the susceptibility to interlayer slip and the intralayer fracture toughness against cracking. GaSe has been predicted, and experimentally confirmed, to be practically amenable to being rolled to large (three quarters) thickness reduction and length extension by a factor of three. Our findings open a new realm of possibility for alloy selection and design towards processing-friendly group-III chalcogenides for flexible electronic and thermoelectric applications.