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Researcher profile

Jian-Jun Zhang

Jian-Jun Zhang contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallquant-ph

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Published work

4 published item(s)

preprint2022arXiv

Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

Operation speed and coherence time are two core measures for the viability of a qubit. Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in germanium (Ge) intriguing candidates for spin qubits with rapid, all-electrical coherent control. Here we report ultrafast single-spin manipulation in a hole-based double quantum dot in a germanium hut wire (GHW). Mediated by the strong SOI, a Rabi frequency exceeding 540 MHz is observed at a magnetic field of 100 mT, setting a record for ultrafast spin qubit control in semiconductor systems. We demonstrate that the strong SOI of heavy holes (HHs) in our GHW, characterized by a very short spin-orbit length of 1.5 nm, enables the rapid gate operations we accomplish. Our results demonstrate the potential of ultrafast coherent control of hole spin qubits to meet the requirement of DiVincenzo's criteria for a scalable quantum information processor.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Dipole coupling of a tunable hole double quantum dot in germanium hut wire to a microwave resonator

The germanium (Ge) hut wire system has strong spin-orbit coupling, a long coherence time due to a very large heavy-light hole splitting, and the advantage of site-controlled large-scale hut wire positioning. These properties make the Ge hut wire a promising candidate for the realization of strong coupling of spin to superconducting resonators and scalability for multiple qubit coupling. We have coupled a reflection line resonator to a hole double quantum dot (DQD) formed in Ge hut wire. The amplitude and phase responses of the microwave resonator revealed that the charge stability diagrams of the DQD are in good agreement with those obtained from transport measurements. The DQD interdot tunneling rate is shown to be tunable from 6.2 GHz to 8.5 GHz, which demonstrates the ability to adjust the frequency detuning between the qubit and the resonator. Furthermore, we achieved a hole-resonator coupling strength of up to 15 MHz, with a charge qubit decoherence rate of 0.28 GHz. Meanwhile the hole spin-resonator coupling rate was estimated to be 3 MHz. These results suggest that holes of a DQD in a Ge hut wire are dipole coupled to microwave photons, potentially enabling tunable hole spin-photon interactions in Ge with an inherent spin-orbit coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Hole spin in tunable Ge hut wire double quantum dot

Holes in germanium (Ge) exhibit strong spin-orbit interaction, which can be exploited for fast and all-electrical manipulation of spin states. Here, we report transport experiments in a tunable Ge hut wire hole double quantum dot. We observe the signatures of Pauli spin blockade (PSB) with a large singlet-triplet energy splitting of ~1.1 meV and extract the g factor. By analyzing the the PSB leakage current, we obtain a spin-orbit length l_so of ~ 40-100 nm. Furthermore, we demonstrate the electric dipole spin resonance. These results lay a solid foundation for implementing high quality tunable hole spin-orbit qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices

Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is a prerequisite towards the next generation of devices that will require addressability and scalability. Here, combining top-down nanofabrication and bottom-up self-assembly, we report on the growth of Ge wires on pre-patterned Si (001) substrates with controllable position, distance, length and structure. This is achieved by a novel growth process which uses a SiGe strain-relaxation template and can be generalized to other material combinations. Transport measurements show an electrically tunable spin-orbit coupling, with a spin-orbit length similar to that of III-V materials. Also, capacitive coupling between closely spaced wires is observed, which underlines their potential as a host for implementing two qubit gates. The reported results open a path towards scalable qubit devices with Si compatibility.

0 citations0 reviewsNo code linkedOpen access