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Researcher profile

Jian-gang Guo

Jian-gang Guo contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.supr-concond-mat.str-el

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Published work

3 published item(s)

preprint2023arXiv

Superconductivity in an Orbital-reoriented SnAs Square Lattice: a Case Study of Li0.6Sn2As2 and NaSnAs

Searching for functional square lattices in layered superconductor systems offers an explicit clue to modify the electron behavior and find exotic properties. The trigonal SnAs3 structural units in SnAs-based systems are relatively conformable to distortion, which provides the possibility to achieve structurally topological transformation and higher superconducting transition temperatures. In the present work, the functional As square lattice was realized and activated in Li0.6Sn2As2 and NaSnAs through a topotactic structural transformation of trigonal SnAs3 to square SnAs4 under pressure, resulting in a record-high Tc among all synthesized SnAs-based compounds. Meanwhile, the conductive channel transfers from the out-of-plane pz orbital to the in-plane px+py orbitals, facilitating electron hopping within the square 2D lattice and boosting the superconductivity. The reorientation of p-orbital following a directed local structure transformation provides an effective strategy to modify layered superconductors.

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preprint2022arXiv

Two-Dimensional Electron Gas with High Mobility Forming at BaO/SrTiO3 Interface

Two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides offers an opportunity for fundamental research and device applications. Binary alkaline earth metal oxides possess compatible lattice constants with both silicon and perovskite oxides, exhibiting an enormous potential to bridging those two materials classes for multifunctionalities. Here we report the formation of 2DEG at the interface between the rock-salt BaO and SrTiO3. The highest electron mobility reaches 69000 cm^2 V.S^-1 at 2 K, leading to the typical Shubniko de Haas (SdH) oscillations under the high magnetic fields. The presence of SdH oscillations at different field-angles reveals a quasi-two-dimensional character of the Fermi surface. The first-principles calculations suggest that the effective charge transfer from the BaO to Ti 3dxy orbital at the interfaces is responsible to the observed high carrier mobility. Our results demonstrate that the BaO/STO heterointerface is a platform for exploring the correlated quantum phases, opening a door to the low-power and mesoscopic electronic devices.

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preprint2021arXiv

Discovery of two families of VSb-based compounds with V-kagome lattice

We report the structure and physical properties of two newly-discovered compounds AV8Sb12 and AV6Sb6 (A = Cs, Rb), which have C2 (space group: Cmmm) and C3 (space group: R-3m) symmetry, respectively. The basic V-kagome unit is present in both compounds, but stacking differently. A V2Sb2 layer is sandwiched between two V3Sb5 layers in AV8Sb12, altering the V-kagome lattice and lowering the symmetry of kagome layer from hexagonal to orthorhombic. In AV6Sb6, the building block is a more complex slab made up of two half-V3Sb5 layers that are intercalated by Cs cations along the c-axis. Transport property measurements demonstrate that both compounds are nonmagnetic metals, with carrier concentrations at around 1021cm-3. No superconductivity has been observed in CsV8Sb12 above 0.3 K under in-situ pressure up to 46 GPa. In contrast to CsV3Sb5, theoretical calculations and angle-resolved photoemission spectroscopy (ARPES) reveal a quasi-two-dimensional electronic structure in CsV8Sb12 with C2 symmetry and no van Hove singularities near the Fermi level. Our findings will stimulate more research into V-based kagome quantum materials.

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