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Source author record

Ji Ung Lee

Ji Ung Lee appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.chem-phcond-mat.supr-con

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Published work

7 published item(s)

preprint2026arXiv

Coupling of Klein-Andreev Resonant States in Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$-graphene-Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ Devices

Quantum devices require coherent coupling over macroscopic distances. Recently, resonances due to Klein tunneling and Andreev reflection states (KARS) have been observed in a naturally occurring p-n junction at the interface between Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (BSCCO), a high-Tc superconductor (HTS), and graphene. The resonances appear as conductance oscillations with gating. Here, we show coupling between the KARS in BSCCO-graphene-BSCCO devices of varying separation (L). The coupling is evidenced by a power-law decay of resonance period as L increases from tens of nanometers to single microns. These results demonstrate the long-distance coupling of KARS cavities in graphene-HTS junctions. The length dependence seen in experiments is supported by single-particle spectral functions which show KARS are coupled by transport modes in graphene. The strong coupling between KARS in BSCCO-graphene-BSCCO junctions showcases the novelty of HTS-graphene junctions for quantum circuits and unconventional Josephson junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Geometric interference in a high-mobility graphene annulus p-n junction device

The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance patterns are carefully inspected, and it is determined that the position of the peaks resulting from those patterns are independent of temperature and magnetic field. Furthermore, these patterns are not attributable to Aharonov-Bohm oscillations, Fabry Perot interference at the junction, or moiré potentials. The device data are compared with those of another device fabricated with a traditional Hall bar geometry, as well as with quantum transport simulation data. Since the two devices are of different topological classes, the subtle differences observed in the corresponding measured data indicate that the most likely source of the observed geometric interference patterns is quantum scarring.

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preprint2016arXiv

Reverse degradation of nickel graphene junction by hydrogen annealing

Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, thus creating a tunneling barrier. Most importantly, we demonstrate that hydrogen annealing at moderate temperature (300 0C) is an effective technique to reverse the degradation.

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preprint2016arXiv

Theory of Landau level mixing in heavily graded graphene p-n junctions

We demonstrate the use of a quantum transport model to study heavily graded graphene p-n junctions in the quantum Hall regime. A combination of p-n interface roughness and delta function disorder potential allows us to compare experimental results on different devices from the literature. We find that wide p-n junctions suppress mixing of $n \neq 0$ Landau levels. Our simulations spatially resolve carrier transport in the device, for the first time, revealing separation of higher order Landau levels in strongly graded junctions, which suppresses mixing.

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preprint2015arXiv

Characterization of Magnetic Ni Clusters on Graphene Scaffold after High Vacuum Annealing

Magnetic Ni nanoclusters were synthesized by electron beam deposition utilizing CVD graphene as a scaffold. The subsequent clusters were subjected to high vacuum (5-8 x10-7 torr) annealing between 300 and 600 0C. The chemical stability, optical and morphological changes were characterized by X-ray photoemission microscopy, Raman spectroscopy, atomic force microscopy and magnetic measurement. Under ambient exposure, nickel nanoparticles was observed to be oxidized quickly, forming antiferromagnetic nickel oxide. Here, we report that the majority of the oxidized nickel is in non-stoichiometric form and can be reduced under high vacuum at temperature as low as 300 0C. Importantly, the resulting annealed clusters are relatively stable and no further oxidation was detectable after three weeks of air exposure at room temperature.

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preprint2014arXiv

Ideal Graphene/Silicon Schottky Junction Diodes

The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors is low. Here, we extend the analysis of metal-silicon Schottky junctions by using graphene, an atomically thin semimetal. We show that a fundamentally new transport model is needed to describe the graphene-silicon Schottky junction. While the current-voltage behavior follows the celebrated ideal diode behavior, the details of the diode characteristics is best characterized by the Landauer transport formalism, suggesting that the injection rate from graphene ultimately determines the transport properties of this new Schottky junction.

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preprint2014arXiv

Reconfigurable p-n Junction Diodes and the Photovoltaic Effect in Exfoliated MoS2 Films

Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS2 flakes. Creating a controllable doping gradient across the device leads to the observation of the photovoltaic effect in monolayer and bilayer MoS2 flakes. For thicker flakes, strong ambipolar conduction enables realization of fully reconfigurable p-n junction diodes with rectifying current-voltage characteristics, and diode ideality factors as low as 1.6. The spectral response of the photovoltaic effect shows signatures of the predicted band gap transitions. For the first excitonic transition, a shift of >4kBT is observed between monolayer and bulk devices, indicating a thickness-dependence of the excitonic coulomb interaction.

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