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Ji Eun Lee

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Published work

4 published item(s)

preprint2026arXiv

Soohak: A Mathematician-Curated Benchmark for Evaluating Research-level Math Capabilities of LLMs

Following the recent achievement of gold-medal performance on the IMO by frontier LLMs, the community is searching for the next meaningful and challenging target for measuring LLM reasoning. Whereas olympiad-style problems measure step-by-step reasoning alone, research-level problems use such reasoning to advance the frontier of mathematical knowledge itself, emerging as a compelling alternative. Yet research-level math benchmarks remain scarce because such problems are difficult to source (e.g., Riemann Bench and FrontierMath-Tier 4 contain 25 and 50 problems, respectively). To support reliable evaluation of next-generation frontier models, we introduce Soohak, a 439-problem benchmark newly authored from scratch by 64 mathematicians. Soohak comprises two subsets. On the Challenge subset, frontier models including Gemini-3-Pro, GPT-5, and Claude-Opus-4.5 reach 30.4%, 26.4%, and 10.4% respectively, leaving substantial headroom, while leading open-weight models such as Qwen3-235B, GPT-OSS-120B, and Kimi-2.5 remain below 15%. Notably, beyond standard problem solving, Soohak introduces a refusal subset that probes a capability intrinsic to research mathematics: recognizing ill-posed problems and pausing rather than producing confident but unjustified answers. On this subset, no model exceeds 50%, identifying refusal as a new optimization target that current models do not directly address. To prevent contamination, the dataset will be publicly released in late 2026, with model evaluations available upon request in the interim.

preprint2016arXiv

Prediction of Band Structure of $Bi_2Te_3$-related Binary and Ternary Thermoelectric Materials

Density functional calculations have performed to study the band structures of $Bi_2Te_3$-related binary ($Bi_2Te_3$, $Sb_2Te_3$, $Bi_2Se_3$, and $Sb_2Se_3$) and $Sb$/$Se$ doped ternary compounds [$(Bi_{1-x}Sb_x)_2Te_3$ and $Bi_2(Te_{1-y}Se_y)_3$]. It is found that the band gap can be increased by $Sb$ doping and it is monotonically increased by $Se$ doping. In ternary compounds, the change of the conduction band structure is more significant, as compared to the change of valence band. The band degeneracy of valence band maximum is maintained to be 6 in binaries and ternaries. However, as going from $Bi_2Te_3$ to $Sb_2Te_3$ ($Bi_2Se_3$), the degeneracy of conduction band minimum is reduced from 6 to 2(1). Based on the results of band structures, we suggest the suitable stoichiometries of ternary compounds for high thermoelectric performance.

preprint2015arXiv

Defects responsible for abnormal n-type conductivity in Ag-excess doped PbTe thermoelectrics

We find that Ag-interstitial ($Ag_I$) acts as an electron donor and plays an important role in Ag-excess doped polycrystalline PbTe thermoelectric materials. When Ag is heavily doped in PbTe, the neutral (Ag-Ag) dimer defect is formed at the Pb-site and the environment becomes Pb-rich/Te-poor condition. Then the positively ionized Ag interstitial ($Ag_I^+$) defect becomes the major defect under Pb-rich condition. Due to the small formation energy and small diffusion barrier of $Ag_I^+$, Ag can be easily dissolved into the PbTe matrix. The temperature behavior of the Ag defect formation energy well explains the $Ag_I^+$ solubility, the electron carrier generation, and the increasing electrical conductivity in Ag-excess doped polycrystalline PbTe at high temperature. This abnormal doping behavior by forming interstitial defects is also found for Au-doped PbTe.

preprint2012arXiv

Optical Separation of Mechanical Strain from Charge Doping in Graphene

Graphene, due to its superior stretchability, exhibits rich structural deformation behaviors and its strain-engineering has proven useful in modifying its electronic and magnetic properties. Despite the strain-sensitivity of the Raman G and 2D modes, the optical characterization of the native strain in graphene on silica substrates has been hampered by excess charges interfering with both modes. Here we show that the effects of strain and charges can be optically separated from each other by correlation analysis of the two modes, enabling simple quantification of both. Graphene with in-plane strain randomly occurring between -0.2% and 0.4% undergoes modest compression (-0.3%) and significant hole doping upon thermal treatments. This study suggests that substrate-mediated mechanical strain is a ubiquitous phenomenon in two-dimensional materials. The proposed analysis will be of great use in characterizing graphene-based materials and devices.