BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Jhih-Rong Gao

Jhih-Rong Gao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
Hardware ArchitectureOther Computer Science

Catalog footprint

What is connected

8works
2topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

8 published item(s)

preprint2015arXiv

E-BLOW: E-Beam Lithography Overlapping aware Stencil Planning for MCC System

Electron beam lithography (EBL) is a promising maskless solution for the technology beyond 14nm logic node. To overcome its throughput limitation, industry has proposed character projection (CP) technique, where some complex shapes (characters) can be printed in one shot. Recently the traditional EBL system is extended into multi-column cell (MCC) system to further improve the throughput. In MCC system, several independent CPs are used to further speed-up the writing process. Because of the area constraint of stencil, MCC system needs to be packed/planned carefully to take advantage of the characters. In this paper, we prove that the overlapping aware stencil planning (OSP) problem is NP-hard. To solve OSP problem in MCC system, we present a tool, E-BLOW, with several novel speedup techniques, such as successive relaxation, dynamic programming, and KD-Tree based clustering. Experimental results show that, compared with previous works, E-BLOW demonstrates better performance for both conventional EBL system and MCC system.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

E-BLOW: E-Beam Lithography Overlapping aware Stencil Planning for MCC System

Electron beam lithography (EBL) is a promising maskless solution for the technology beyond 14nm logic node. To overcome its throughput limitation, recently the traditional EBL system is extended into MCC system. %to further improve the throughput. In this paper, we present E-BLOW, a tool to solve the overlapping aware stencil planning (OSP) problems in MCC system. E-BLOW is integrated with several novel speedup techniques, i.e., successive relaxation, dynamic programming and KD-Tree based clustering, to achieve a good performance in terms of runtime and solution quality. Experimental results show that, compared with previous works, E-BLOW demonstrates better performance for both conventional EBL system and MCC system.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

L-Shape based Layout Fracturing for E-Beam Lithography

Layout fracturing is a fundamental step in mask data preparation and e-beam lithography (EBL) writing. To increase EBL throughput, recently a new L-shape writing strategy is proposed, which calls for new L-shape fracturing, versus the conventional rectangular fracturing. Meanwhile, during layout fracturing, one must minimize very small/narrow features, also called slivers, due to manufacturability concern. This paper addresses this new research problem of how to perform L-shaped fracturing with sliver minimization. We propose two novel algorithms. The first one, rectangular merging (RM), starts from a set of rectangular fractures and merges them optimally to form L-shape fracturing. The second algorithm, direct L-shape fracturing (DLF), directly and effectively fractures the input layouts into L-shapes with sliver minimization. The experimental results show that our algorithms are very effective.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Lithography Hotspot Detection and Mitigation in Nanometer VLSI

With continued feature size scaling, even state of the art semiconductor manufacturing processes will often run into layouts with poor printability and yield. Identifying lithography hotspots is important at both physical verification and early physical design stages. While detailed lithography simulations can be very accurate, they may be too computationally expensive for full-chip scale and physical design inner loops. Meanwhile, pattern matching and machine learning based hotspot detection methods can provide acceptable quality and yet fast turn-around-time for full-chip scale physical verification and design. In this paper, we discuss some key issues and recent results on lithography hotspot detection and mitigation in nanometer VLSI.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Methodology for standard cell compliance and detailed placement for triple patterning lithography

As the feature size of semiconductor process further scales to sub-16nm technology node, triple patterning lithography (TPL) has been regarded one of the most promising lithography candidates. M1 and contact layers, which are usually deployed within standard cells, are most critical and complex parts for modern digital designs. Traditional design flow that ignores TPL in early stages may limit the potential to resolve all the TPL conflicts. In this paper, we propose a coherent framework, including standard cell compliance and detailed placement to enable TPL friendly design. Considering TPL constraints during early design stages, such as standard cell compliance, improves the layout decomposability. With the pre-coloring solutions of standard cells, we present a TPL aware detailed placement, where the layout decomposition and placement can be resolved simultaneously. Our experimental results show that, with negligible impact on critical path delay, our framework can resolve the conflicts much more easily, compared with the traditional physical design flow and followed layout decomposition.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Self-Aligned Double Patterning Friendly Configuration for Standard Cell Library Considering Placement

Self-aligned double patterning (SADP) has become a promising technique to push pattern resolution limit to sub-22nm technology node. Although SADP provides good overlay controllability, it encounters many challenges in physical design stages to obtain conflict-free layout decomposition. In this paper, we study the impact on placement by different standard cell layout decomposition strategies. We propose a SADP friendly standard cell configuration which provides pre-coloring results for standard cells. These configurations are brought into the placement stage to help ensure layout decomposability and save the extra effort for solving conflicts in later stages.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Triple Patterning Lithography (TPL) Layout Decomposition using End-Cutting

Triple patterning lithography (TPL) is one of the most promising techniques in the 14nm logic node and beyond. However, traditional LELELE type TPL technology suffers from native conflict and overlapping problems. Recently LELEEC process was proposed to overcome the limitations, where the third mask is used to generate the end-cuts. In this paper we propose the first study for LELEEC layout decomposition. Conflict graphs and end-cut graphs are constructed to extract all the geometrical relationships of input layout and end-cut candidates. Based on these graphs, integer linear programming (ILP) is formulated to minimize the conflict number and the stitch number.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Triple Patterning Lithography (TPL) Layout Decomposition using End-Cutting (JM3 Special Session)

Triple patterning lithography (TPL) is one of the most promising techniques in the 14nm logic node and beyond. Conventional LELELE type TPL technology suffers from native conflict and overlapping problems. Recently, as an alternative process, triple patterning lithography with end cutting (LELE-EC) was proposed to overcome the limitations of LELELE manufacturing. In LELE-EC process the first two masks are LELE type double patterning, while the third mask is used to generate the end-cuts. Although the layout decomposition problem for LELELE has been well-studied in the literature, only few attempts have been made to address the LELE-EC layout decomposition problem. In this paper we propose the comprehensive study for LELE-EC layout decomposition. Conflict graph and end-cut graph are constructed to extract all the geometrical relationships of both input layout and end-cut candidates. Based on these graphs, integer linear programming (ILP) is formulated to minimize the conflict number and the stitch number. The experimental results demonstrate the effectiveness of the proposed algorithms.

0 citations0 reviewsNo code linkedOpen access