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Source author record

Jérémie Drevillon

Jérémie Drevillon appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticscond-mat.mes-hallphysics.class-phcond-mat.mtrl-scicond-mat.supr-conquant-ph

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Published work

9 published item(s)

preprint2016arXiv

Quantum thermal transistor

We demonstrate that a thermal transistor can be made up with a quantum system of 3 interacting subsystems , coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base. This is achieved determining the heat fluxes by means of the strong-coupling formalism. For the case of 3 interacting spins, in which one of them is coupled to the other 2, that are not directly coupled, it is shown that high amplification can be obtained in a wide range of energy parameters and temperatures. The proposed quantum transistor could, in principle, be used to develop devices such as a thermal modulator and a thermal amplifier in nano systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Energy density above a resonant metamaterial in the GHz: an alternative to near-field thermal emission detection

This paper proposes an experiment to easily detect radiative heat transfer in the microwave range. Following an idea given by Pendry more than a decade ago [1], we show that a 3D array of tungsten 2micron radius wires with a 1 cm period makes a low cost material exhibiting a surface plasmon in the microwave range around 2.9 GHz. Such a heated material should exhibit an emission peak near the plasmon frequency well above ambient emission. Analysis of the signal detected in the near-field should also be a tool to analyze how homogenization theory applies when the distance to the material is of the order of the metamaterial period. It could also be give a model to non-local dielectric properties in the same conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Modulation and amplification of radiative far field heat transfer: Towards a simple radiative thermal transistor

We show in this article that phase change materials (PCM) exhibiting a phase transition between a dielectric state and a metallic state are good candidates to perform modulation as well as amplification of radiative thermal flux. We propose a simple situation in plane parallel geometry where a so-called radiative thermal transistor could be achieved. In this configuration, we put a PCM between two blackbodies at different temperatures. We show that the transistor effect can be achieved easily when this material has its critical temperature between the two blackbody temperatures. We also see, that the more the material is reflective in the metallic state, the more switching effect is realized whereas the more PCM transition is stiff in temperature, the more thermal amplification is high. We finally take the example of VO2 that exhibits an insulator-metallic transition at 68{\textdegree}C. We show that a demonstrator of a radiative transistor could easily be achieved in view of the heat flux levels predicted. Far-field thermal radiation experiments are proposed to back the results presented.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Radiative Thermal Rectification between SiC and SiO2

By means of fluctuationnal electrodynamics, we calculate radiative heat flux between two pla-nar materials respectively made of SiC and SiO2. More specifically, we focus on a first (direct) situation where one of the two materials (for example SiC) is at ambient temperature whereas the second material is at a higher one, then we study a second (reverse) situation where the material temperatures are inverted. When the two fluxes corresponding to the two situations are different, the materials are said to exhibit a thermal rectification, a property with potential applications in thermal regulation. Rectification variations with temperature and separation distance are here reported. Calculations are performed using material optical data experimentally determined by Fourier transform emission spectrometry of heated materials between ambient temperature (around 300 K) and 1480 K. It is shown that rectification is much more important in the near-field domain, i.e. at separation distances smaller than the thermal wavelength. In addition, we see that the larger is the temperature difference, the larger is rectification. Large rectification is finally interpreted due to a weakening of the SiC surface polariton when temperature increases, a weakening which affects much less SiO2 resonances.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A simple radiative thermal diode

We present a thermal rectification device concept based on far-field radiative exchange between two selective emitters. Rectification is achieved due to the fact that one of the selective emitters radiative properties are independent on temperature whereas the other emitter properties are strongly temperature dependent. A simple device constituted by two multilayer samples made of metallic (Au) and semiconductor (Si and HDSi) thin films is proposed. This device shows a rectification up to 70% with a temperature difference ΔT = 200 K, a rectification ratio that has never been achieved so far with radiation-based rectifiers. Further optimization would allow larger rectification values. Presented results might be useful for energy conversion devices, smart radiative coolers / insulators engineering and thermal modulators development.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Maximal near-field radiative heat transfer between two plates

A parametric study of Drude and Lorentz models performances in maximizing near-field radiative heat transfer between two semi-infinite planes separated by nanometric distances at room temperature is presented in this paper. Optimal parameters of these models that provide optical properties maximizing the radiative heat flux are reported and compared to real materials usually considered in similar studies, silicon carbide and heavily doped silicon in this case. Results are obtained by exact and approximate (in the extreme near-field regime and the electrostatic limit hypothesis) calculations. The two methods are compared in terms of accuracy and CPU resources consumption. Their differences are explained according to a mesoscopic description of near-field radiative heat transfer. Finally, the frequently assumed hypothesis which states a maximal radiative heat transfer when the two semi-infinite planes are of identical materials is numerically confirmed. Its subsequent practical constraints are then discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Radiative thermal rectification using superconducting materials

Thermal rectification phenomenon is a manifestation of an asymmetry in the heat flux when the temperature difference between two interacting thermal reservoirs is reversed. In this letter, we present a far-field radiative thermal rectifier based on high temperature superconducting materials with a rectification ratio up to $80%$. This value is among the highest reported in literature. Two configurations are examined : a superconductor (Tl$_2$Ba$_2$CaCu$_2$O$_8$) exchanging heat with 1) a black body and 2) another superconductor, YBa$_2$Cu$_3$O$_7$ in this case. The first configuration shows a higher maximal rectification ratio. Besides, we show that the two superconductors rectifier exhibits different rectification regimes depending on the choice of the reference temperature, i.e the temperature of the thermostat. Presented results might be useful for energy conversion devices, efficient cryogenic radiative insulators engineering and thermal logical circuits development.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Selective emitters design and optimization for thermophotovoltaic applications

Among several solutions to exploit solar energy, thermophotovoltaics (TPV) have been popularized and have known great breakthroughs during the past two decades. Yet, existing systems still have low efficiencies since the wavelength range of optimal photovoltaic (PV) conversion is very small compared to the emitter spectral range. Selective emitters are a very promising solution to this problem. We developed numerical tools to design and optimize such emitters. Some of the resulting structures composed of two or four layers of metals and semiconductors are presented in this paper. We also show that the usual PV devices efficiency limits (30% for crystalline silicon under solar radiation, according to Shockley-Queisser model) can be easily overcome thanks to these structures.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Tailoring the local density of states of non-radiative field at the surface of nanolayered materials

The ability to artificially grow in a controllable manner at nanoscale, from modern deposition techniques, complex structural configurations made with metallic, polar and semiconductors materials raises today the issue of the "best" achievable inner structure to tailor the near-field properties of a nanostructured medium. In the present work we make a step towards the rational design of these materials by reporting numerical experimentations demonstrating the possibility of identifying structural configurations of layered metallodielectric media specifically designed to control the electromagnetic density of states in the close vicinity of their surface. These results could find broad applications in near-field technologies.

0 citations0 reviewsNo code linkedOpen access