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Jens Hübner

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cond-mat.mes-hall cond-mat.other physics.ins-det quant-ph

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preprint2015arXiv

Interplay of Electron and Nuclear Spin Noise in GaAs

We present spin noise (SN) measurements on an ensemble of donor-bound electrons in ultrapure GaAs:Si covering temporal dynamics over six orders of magnitude from milliseconds to nanoseconds. The SN spectra detected at the donor-bound exciton transition show the multifaceted dynamical regime of the ubiquitous mutual electron and nuclear spin interaction typical for III-V based semiconductor systems. The experiment distinctly reveals the finite Overhauser-shift of an electron spin precession at zero external magnetic field and a second contribution around zero frequency stemming from the electron spin components parallel to the nuclear spin fluctuations. Moreover, at very low frequencies features related with time-dependent nuclear spin fluctuations are clearly resolved making it possible to study the intricate nuclear spin dynamics at zero and low magnetic fields. The findings are in agreement with the developed model of electron and nuclear SN.

preprint2014arXiv

Optical Spin Noise of a Single Hole Spin Localized in an (InGa)As Quantum Dot

We advance spin noise spectroscopy to the ultimate limit of single spin detection. This technique enables the measurement of the spin dynamic of a single heavy hole localized in a flat (InGa)As quantum dot. Magnetic field and light intensity dependent studies reveal even at low magnetic fields a strong magnetic field dependence of the longitudinal heavy hole spin relaxation time with an extremely long $T_1$ of $\ge$ 180 $μ$s at 31 mT and 5 K. The wavelength dependence of the spin noise power discloses for finite light intensities an inhomogeneous single quantum dot spin noise spectrum which is explained by charge fluctuations in the direct neighborhood of the quantum dot. The charge fluctuations are corroborated by the distinct intensity dependence of the effective spin relaxation rate.

preprint2012arXiv

Ultrahigh Bandwidth Spin Noise Spectroscopy: Detection of Large g-Factor Fluctuations in Highly n-Doped GaAs

We advance all optical spin noise spectroscopy (SNS) in semiconductors to detection bandwidths of several hundred gigahertz by employing an ingenious scheme of pulse trains from ultrafast laser oscillators as an optical probe. The ultrafast SNS technique avoids the need for optical pumping and enables nearly perturbation free measurements of extremely short spin dephasing times. We employ the technique to highly n-doped bulk GaAs where magnetic field dependent measurements show unexpected large g-factor fluctuations. Calculations suggest that such large g-factor fluctuations do not necessarily result from extrinsic sample variations but are intrinsically present in every doped semiconductor due to the stochastic nature of the dopant distribution.

preprint2011arXiv

Efficient Data Averaging for Spin Noise Spectroscopy in Semiconductors

Spin noise spectroscopy (SNS) is the perfect tool to investigate electron spin dynamics in semiconductors at thermal equilibrium. We simulate SNS measurements and show that ultrafast digitizers with low bit depth enable sensitive, high bandwidth SNS in the presence of strong optical background shot noise. The simulations reveal that optimized input load at the digitizer is crucial for efficient spin noise detection while the bit depth influences the sensitivity rather weakly.

preprint2010arXiv

GHz Spin Noise Spectroscopy in n-Doped Bulk GaAs

We advance spin noise spectroscopy to an ultrafast tool to resolve high frequency spin dynamics in semiconductors. The optical non-demolition experiment reveals the genuine origin of the inhomogeneous spin dephasing in n-doped GaAs wafers at densities at the metal-to-insulator transition. The measurements prove in conjunction with depth resolved spin noise measurements that the broadening of the spin dephasing rate does not result from thermal fluctuations or spin-phonon interaction, as previously suggested, but from surface electron depletion.