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Jennifer K. Hite appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.
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An all-epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an alumi-num plasmonic metal / SiNx dielectric / InGaN quantum well shell surrounding a p-GaN nanowire core. Strong UV lumi-nescence was observed from as-grown vertically-aligned arrays as well as horizontally-aligned nanowires transferred to a transparent carrier wafer.
This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the carbon paper. Strong photo- and electro-luminescence was observed from InGaN quantum well light emitting diode nanowires.
This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the nickel foam. Strong luminescence was observed from undoped GaN and InGaN quantum well light emitting diode nanowires.
An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this nanowire displayed a low-voltage transition from Ohmic to space charge limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross-section, which creates a doublet peak in the piezoelectric induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces as well as an interaction with the opposing polarization fields at two semi-polar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on configuration of the multi-layer structure, and is not amenable to an analytical model.
Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene.
In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This process enables EG films to be used in flexible electronic devices or as optically transparent contacts.