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Jennifer A. Hollingsworth

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Published work

4 published item(s)

preprint2021arXiv

Twist Angle Dependent Interlayer Exciton Lifetimes in van der Waals Heterostructures

In van der Waals (vdW) heterostructures formed by stacking two monolayers of transition metal dichalcogenides, multiple exciton resonances with highly tunable properties are formed and subject to both vertical and lateral confinement. We investigate how a unique control knob, the twist angle between the two monolayers, can be used to control the exciton dynamics. We observe that the interlayer exciton lifetimes in $\text{MoSe}_{\text{2}}$/$\text{WSe}_{\text{2}}$ twisted bilayers (TBLs) change by one order of magnitude when the twist angle is varied from 1$^\circ$ to 3.5$^\circ$. Using a low-energy continuum model, we theoretically separate two leading mechanisms that influence interlayer exciton radiative lifetimes. The shift to indirect transitions in the momentum space with an increasing twist angle and the energy modulation from the moiré potential both have a significant impact on interlayer exciton lifetimes. We further predict distinct temperature dependence of interlayer exciton lifetimes in TBLs with different twist angles, which is partially validated by experiments. While many recent studies have highlighted how the twist angle in a vdW TBL can be used to engineer the ground states and quantum phases due to many-body interaction, our studies explore its role in controlling the dynamics of optically excited states, thus, expanding the conceptual applications of "twistronics".

preprint2018arXiv

Purification of single photons by temporal heralding of quantum dot sources

Efficient, high rate photon sources with high single photon purity are essential ingredients for quantum technologies. Single photon sources based on solid state emitters such as quantum dots are very advantageous for integrated photonic circuits, but they can suffer from a high two-photon emission probability, which in cases of non-cryogenic environment cannot be spectrally filtered. Here we propose two temporal purification-by-heralding methods for using a two photon emission process to yield highly pure and efficient single photon emission, bypassing the inherent problem of spectrally overlapping bi-photon emission. We experimentally demonstrate their feasibility on the emission from a single nanocrystal quantum dot, exhibiting single photon purities exceeding 99.5%, without a significant loss of single photon efficiency. These methods can be applied for any indeterministic source of spectrally broadband photon pairs.

preprint2016arXiv

Strong plasmonic enhancement of biexciton emission: controlled coupling of a single quantum dot to a gold nanocone antenna

Multiexcitonic transitions and emission of several photons per excitation comprise a very attractive feature of semiconductor quantum dots for optoelectronics applications. However, these higher-order radiative processes are usually quenched in colloidal quantum dots by Auger and other non-radiative decay channels. To increase the multiexcitonic quantum efficiency, several groups have explored plasmonic enhancement, so far with moderate results. By controlled positioning of individual quantum dots in the near field of gold nanocone antennas, we enhance the radiative decay rates of monoexcitons and biexcitons by 109 and 100 folds at quantum efficiencies of 60% and 70%, respectively, in very good agreement with the outcome of numerical calculations. We discuss the implications of our work for future fundamental and applied research in nano-optics.

preprint2006arXiv

The effect of Auger heating on intraband carrier relaxation in semiconductor quantumrods

The rate at which excited charge carriers relax to their equilibrium state affects many aspects of the performance of nanoscale devices, including switching speed, carrier mobility and luminescent efficiency. Better understanding of the processes that govern carrier relaxation therefore has important technological implications. A significant increase in carrier-carrier interactions caused by strong spatial confinement of electronic excitations in semiconductor nanostructures leads to a considerable enhancement of Auger effects, which can further result in unusual, Auger-process-controlled recombination and energy-relaxation regimes. Here, we report the first experimental observation of efficient Auger heating in CdSe quantum rods at high pump intensities, leading to a strong reduction of carrier cooling rates. In this regime, the carrier temperature is determined by the balance between energy outflow through phonon emission and energy inflow because of Auger heating. This equilibrium results in peculiar carrier cooling dynamics that closely correlate with recombination dynamics, an effect never before seen in bulk or nanoscale semiconductors.