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Source author record

Jean-Pierre Leburton

Jean-Pierre Leburton appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scimath-phmath.MPphysics.app-phphysics.comp-phphysics.opticsquant-ph

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Published work

9 published item(s)

preprint2020arXiv

Microscopic Transport Analysis of Single Molecule Detection in MoS$_2$ Nanopore Membranes

A microscopic physical analysis of the various resistive effects involved in the electronic detection of single biomolecules in a nanopore of a MoS2 nanoribbon is presented. The analysis relies on a combined experimental-theoretical approach, where the variations of the transverse electronic current along the two-dimensional (2D) membrane due to the translocation of DNA and proteins molecules through the pore are compared with model calculations based on molecular dynamics (MD) and Boltzmann transport formalism for evaluating the membrane conductance. Our analysis that points to a self-consistent interaction among ions, charge carriers around the pore rim and biomolecules, emphasizes the effects of the electrolyte concentration, pore size, nanoribbon geometry, but also the doping polarity of the nanoribbon on the electrical sensitivity of the nanopore in detecting biomolecules, which agrees well with the experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tunable magnetic phases in quasi-one-dimensional systems

There has been considerable debate on the onset of exotic spin phenomena in quantum wires due to enhanced many-body effects caused by the one-dimensional (1D) alignment of charge carriers. We explain various observed spin effects, such as a carrier density-dependent spin-flip in dilute quasi-1D systems and the variability of the spin polarization in quantum point contacts, by using an unrestricted Hartree-Fock approach with a three-dimensional (3D) Coulomb interaction. The model dimensionality is critical in identifying a complex pattern of magnetic phases varying with confinement and magnetic field. In the limit of vanishing magnetic fields, we show the emergence of a degenerate excited state with opposite spin polarization above a confinement-dependent 1D concentration threshold, which is consistent with observations of a conductance plateau at half the conductance quantum $G_{0}/2=e^{2}/h$, even in the absence of spin-orbit interactions. Moreover, spin polarization disappears in highly-asymmetrically confined wires, and strictly two-dimensional systems.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Terahertz Harmonic Generation in Graphene

We show that charge carrier transport in graphene exhibit sharp resonances in the presence of spatially and temporarily modulated scattering. Resonances occur when the period of an applied a-c field corresponds to the time taken by quasi-ballistic carriers to drift over a spatial scattering period, provided the latter is shorter than the distance taken by carriers to emit an optic phonon. We show that such system can be achieved with interdigitated gates energized with an a-c bias on graphene layers. Gate separation and fields to achieve ballistic transport would result in resonances in the terahertz range, with the generation of higher harmonics characterized by large Q-factors, which are tunable with gate spacing.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Temperature Modulation of the Transmission Barrier in Quantum Point Contacts

We investigate near-equilibrium ballistic transport through a quantum point contact (QPC) along a GaAs/AlGaAs heterojunction with a transfer matrix technique, as a function of temperature and the shape of the potential barrier in the QPC. Our analysis is based on a three-dimensional (3D) quantum-mechanical variational model within the Hartree-Fock approximation that takes into account the vertical depletion potential from ionized acceptors in GaAs and the gate-induced transverse confinement potential that reduce to an effective slowly-varying one-dimensional (1D) potential along the narrow constriction. The calculated zero-temperature transmission exhibits a shoulder ranging from 0.3 to 0.6 depending on the length of the QPC and the profile of the barrier potential. The effect is a consequence of the compressibility peak in the 1D electron gas and is enhanced for anti-ferromagnetic interaction among electrons in the QPC, but is smeared out once temperature is increased by a few tenths of a kelvin.

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preprint2012arXiv

Bandwidth enhancement and optical performances of multiple quantum well transistor lasers

A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the Multiple Quantum Well Heterojunction Bipolar Transistor Laser in time-domain. Simulation results extracted using numerical techniques in small-signal regime predict significant enhancement in device optical bandwidth when multiple quantum wells are used. Cavity length and base width are also modified to optimize the optoelectronic performances of the device. An optical bandwidth of \approx 60GHz is achieved in the case of 5 quantum wells each of 70A widths and a cavity length of 200um.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Circuit Modeling of Tunneling Real-Space Transfer Transistors: Toward Terahertz Frequency Operation

High frequency operation of tunneling real-space transfer transistor (TRSTT) in the negative differential resistance (NDR) regime is assessed by calculating the device common source unity current gain frequency (fT) range with a small signal equivalent circuit model including tunneling. Our circuit model is based on an In0.2Ga0.8As and delta-doped GaAs dual channel structure with various gate lengths. The calculated TRSTT fT agrees very well with experimental data, limiting factor being the resistance of the delta-doped GaAs layer. By optimizing the gate dimensions and channel materials, we find fT in the NDR region approaches terahertz range, which anticipates potential use of TRSTT as terahertz sources.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Soft Carrier Multiplications by Hot Electrons in Graphene

By using Boltzmann formalism, we show that carrier multiplication by impact ionization can take place at relatively low electric fields during electronic transport in graphene. Because of the absence of energy gap, this effect is not characterized by a field threshold unlike in conventional semiconductors, but is a quadratic function of the electric field. We also show that the resulting current is an increasing function of the electronic temperature, but decreases with increasing carrier concentration.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

High-field Carrier Velocity and Current Saturation in Graphene Field-Effect Transistors

We obtain the output characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed expressions for the conductance, transconductance and saturation voltage are derived. We found good agreement with the experimental data of Meric et al. [1], without assuming a carrier density-dependent velocity saturation.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Modeling of the Output and Transfer Characteristics of Graphene Field-Effect Transistors

We obtain the output and transfer characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed expressions for the conductance, transconductance and saturation voltage are derived. We found good agreement with the experimental data of Meric et al. [Nature Nanotechnology 3, 684 (2008)] without assuming carrier density-dependent velocity saturation.

0 citations0 reviewsNo code linkedOpen access