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Jaydeep Joshi

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3works
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3 publications

preprint2021arXiv

Charge Density Wave Activated Excitons in TiSe2_2-MoSe2_2 Heterostructures

Layered materials enable the assembly of a new class of heterostructures where lattice-matching is no longer a requirement. Interfaces in these heterostructures therefore become a fertile ground for unexplored physics as dissimilar phenomena can be coupled via proximity effects. In this article we identify an unexpected photoluminescence (PL) peak when MoSe2_2 interacts with TiSe2_2. A series of temperature-dependent and spatially-resolved PL measurements reveal this peak is unique to the TiSe2_2-MoSe2_2 interface, higher in energy compared to the neutral exciton, and exhibits exciton-like characteristics. The feature disappears at the TiSe2_2 charge density wave transition, suggesting that the density wave plays an important role in the formation of this new exciton. We present several plausible scenarios regarding the origin of this peak that individually capture some aspects of our observations, but cannot fully explain this feature. These results therefore represent a fresh challenge for the theoretical community and provide a fascinating way to engineer excitons through interactions with charge density waves.

preprint2020arXiv

Localized Excitons in NbSe2_2-MoSe2_2 Heterostructures

Neutral and charged excitons (trions) in atomically-thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly-efficient light-emitting diodes and lasers. Recent studies of van der Waals (vdW) heterostructures comprised of dissimilar monolayer materials have uncovered a wealth of optical phenomena that are predominantly governed by interlayer interactions. Here, we examine the optical properties in NbSe2_2 - MoSe2_2 vdW heterostructures, which provide an important model system to study metal-semiconductor interfaces, a common element in optoelectronics. Through low-temperature photoluminescence (PL) microscopy we discover a sharp emission feature, L1, that is localized at the NbSe2_2-capped regions of MoSe2_2. L1 is observed at energies below the commonly-studied MoSe2_2 excitons and trions, and exhibits temperature- and power-dependent PL consistent with exciton localization in a confining potential. Remarkably, L1 is very robust not just in different samples, but also under a variety of fabrication processes. Using first-principles calculations we reveal that the confinement potential required for exciton localization naturally arises from the in-plane band bending due to the changes in the electron affinity between pristine MoSe2_2 and NbSe2_2 - MoSe2_2 heterostructure. We discuss the implications of our studies for atomically-thin optoelectronics devices with atomically-sharp interfaces and tunable electronic structures.

preprint2016arXiv

Phonon Anharmonicity in Bulk TdT_d-MoTe2_2

We examine anharmonic contributions to the optical phonon modes in bulk TdT_d-MoTe2_2 through temperature-dependent Raman spectroscopy. At temperatures ranging from 100 K to 200 K, we find that all modes redshift linearly with temperature in agreement with the Grüneisen model. However, below 100 K we observe nonlinear temperature-dependent frequency shifts in some modes. We demonstrate that this anharmonic behavior is consistent with the decay of an optical phonon into multiple acoustic phonons. Furthermore, the highest frequency Raman modes show large changes in intensity and linewidth near T≈250T\approx 250 K that correlate well with the Td→1T′T_d \to 1T^\prime structural phase transition. These results suggest that phonon-phonon interactions can dominate anharmonic contributions at low temperatures in bulk TdT_d-MoTe2_2, an experimental regime that is currently receiving attention in efforts to understand Weyl semimetals.

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