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Jason Horng

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cond-mat.mes-hall cond-mat.mtrl-sci physics.optics

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preprint2019arXiv

Engineering Effects of Vacuum Fluctuations on Two-dimensional Semiconductors

The resonance energy and the transition rate of atoms, molecules and solids were understood as their intrinsic properties in classical electromagnetism. With the development of quantum electrodynamics, it is realized that these quantities are linked to the coupling of the transition dipole and the quantum vacuum. Such effects can be greatly amplified in macroscopic many-body systems from virtual photon exchange between dipoles, but are often masked by inhomogeneity and pure dephasing, especially in solids. Here, we observe an exceptionally large renormalization of exciton resonance and radiative decay rate in transition metal dichalcogenides monolayers due to interactions with the vacuum in both absorption and emission spectroscopy. Tuning the vacuum energy density near the monolayer, we demonstrate control of cooperative Lamb shift, radiative decay, and valley polarization as well as control of the charged exciton emission. Our work establishes a simple and robust experimental system for vacuum engineering of cooperative matter-light interactions.

preprint2019arXiv

Perfect absorption by an atomically thin crystal

Optical absorption is one of fundamental light-matter interactions. In most materials, optical absorption is a weak perturbation to the light. In this regime, absorption and emission are irreversible, incoherent processes due to strong damping. Excitons in monolayer transition metal dichalcogenides, however, interact strongly with light, leading to optical absorption in the non-perturbative regime where coherent re-emission of the light has to be considered. Between the incoherent and coherent limits, we show that a robust critical coupling condition exists, leading to perfect optical absorption. Up to 99.6% absorption is measured in a sub-nanometer thick MoSe2 monolayer placed in front of a mirror. The perfect absorption is controlled by tuning the exciton-phonon, exciton-exciton, and exciton-photon interactions by temperature, pulsed laser excitation, and a movable mirror, respectively. Our work suggests unprecedented opportunities for engineering exciton-light interactions using two-dimensional atomically thin crystals, enabling novel photonic applications including ultrafast light modulators and sensitive optical sensing.

preprint2018arXiv

Encapsulation Narrows Excitonic Homogeneous Linewidth of Exfoliated MoSe$_2$ Monolayer

The excitonic homogeneous linewidth of an exfoliated monolayer MoSe$_2$ encapsulated in hexagonal boron nitride is directly measured using multidimensional coherent spectroscopy with micron spatial resolution. The linewidth is 0.26 $\pm$ 0.02 meV, corresponding to a dephasing time $T_2 \approx$ 2.5 ps, which is almost half the narrowest reported values for non-encapsulated MoSe$_2$ flakes. We attribute the narrowed linewidth to Coulomb screening by the encapsulated material and suppression of non-radiative processes. Through direct measurements of encapsulated and non-encapsulated monolayers, we confirm that encapsulation reduces the sample inhomogeneity. However, linewidths measured using photoluminescence and linear absorption remain dominated by inhomogeneity, and these linewidths are roughly 5 times larger than the homogeneous linewidth in even the highest-quality encapsulated materials. The homogeneous linewidth of non-encapsulated monolayers is very sensitive to temperature cycling, whereas encapsulated samples are not modified by temperature cycling. The nonlinear signal intensity of non-encapsulated monolayers is degraded by high-power optical excitation, whereas encapsulated samples are very resilient to optical excitation with optical powers up to the point of completely bleaching the exciton.

preprint2014arXiv

Gate-dependent Pseudospin Mixing in Graphene/Boron Nitride Moire Superlattices

Electrons in graphene are described by relativistic Dirac-Weyl spinors with a two-component pseudospin1-12. The unique pseudospin structure of Dirac electrons leads to emerging phenomena such as the massless Dirac cone2, anomalous quantum Hall effect2, 3, and Klein tunneling4, 5 in graphene. The capability to manipulate electron pseudospin is highly desirable for novel graphene electronics, and it requires precise control to differentiate the two graphene sub-lattices at atomic level. Graphene/boron nitride (graphene/BN) Moire superlattice, where a fast sub-lattice oscillation due to B-N atoms is superimposed on the slow Moire period, provides an attractive approach to engineer the electron pseudospin in graphene13-18. This unusual Moire superlattice leads to a spinor potential with unusual hybridization of electron pseudospins, which can be probed directly through infrared spectroscopy because optical transitions are very sensitive to excited state wavefunctions. Here, we perform micro-infrared spectroscopy on graphene/BN heterostructure and demonstrate that the Moire superlattice potential is dominated by a pseudospin-mixing component analogous to a spatially varying pseudomagnetic field. In addition, we show that the spinor potential depends sensitively on the gate-induced carrier concentration in graphene, indicating a strong renormalization of the spinor potential from electron-electron interactions. Our study offers deeper understanding of graphene pseudospin structure under spinor Moire potential, as well as exciting opportunities to control pseudospin in two-dimensional heterostructures for novel electronic and photonic nanodevices.

preprint2010arXiv

Drude Conductivity of Dirac Fermions in Graphene

Electrons moving in graphene behave as massless Dirac fermions, and they exhibit fascinating low-frequency electrical transport phenomena. Their dynamic response, however, is little known at frequencies above one terahertz (THz). Such knowledge is important not only for a deeper understanding of the Dirac electron quantum transport, but also for graphene applications in ultrahigh speed THz electronics and IR optoelectronics. In this paper, we report the first measurement of high-frequency conductivity of graphene from THz to mid-IR at different carrier concentrations. The conductivity exhibits Drude-like frequency dependence and increases dramatically at THz frequencies, but its absolute strength is substantially lower than theoretical predictions. This anomalous reduction of free electron oscillator strength is corroborated by corresponding changes in graphene interband transitions, as required by the sum rule. Our surprising observation indicates that many-body effects and Dirac fermion-impurity interactions beyond current transport theories are important for Dirac fermion electrical response in graphene.