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Researcher profile

Janos Kiss

Janos Kiss contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2013arXiv

Disorder-induced cubic phase in Fe$_2$-based Heusler alloys

Based on first-principles electronic structure calculations, we analyze the chemical and magnetic mechanisms stabilizing the cubic phase in Fe$_2$-based Heusler materials, which were previously predicted to be tetragonal when being chemically ordered. In agreement with recent experimental data, we found that these compounds crystallize within the so-called "inverted" cubic Heusler structure perturbed by a certain portion of the intrinsic chemical disorder. Understanding these mechanisms is a necessary step to guide towards the successful future synthesis of the stable Fe$_2$-based tetragonal phases, which are very promising candidates for the fabrication of rare-earth-free permanent magnets.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Topological phase transition induced by random substitution

The transition from topologically nontrivial to a trivial state is studied by first-principles calculations on bulk zinc-blende type (Hg$_{1-x}$Zn$_x$)(Te$_{1-x}$S$_x$) disordered alloy series. The random chemical disorder was treated by means of the Coherent Potential Approximation. We found that although the phase transition occurs at the strongest disorder regime (${x\approx 0.5}$), it is still manifested by well-defined Bloch states forming a clear Dirac cone at the Fermi energy of the bulk disordered material. The computed residual resistivity tensor confirm the topologically-nontrivial state of the HgTe-rich (${x<0.5}$), and the trivial state of the ZnS-rich alloy series (${x>0.5}$) by exhibiting the quantized behavior of the off-diagonal spin-projected component, independently on the concentration $x$.

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preprint2012arXiv

Topological phase transitions in bulk

We consider the analogy between the topological phase transition which occurs as a function of spatial coordinate on a surface of a non-trivial insulator, and the one which occurs in the bulk due to the change of internal parameters (such as crystal field and spin-orbit coupling). In both cases the system exhibits a Dirac cone, which is the universal manifestation of topological phase transition, independently on the type of driving parameters. In particular, this leads to a simple way of determining the topological class based solely on the bulk information even for the systems with translational symmetry broken by atomic disorder or by strong electron correlations. Here we demonstrate this on example of the zinc-blende related semiconductors by means of the {\it ab-initio} fully-relativistic band structure calculations involving the coherent potential approximation (CPA) technique.

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