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Janos Kiss

Janos Kiss appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2016arXiv

Behavior of $\mathbf{Σ3}$ grain boundaries in \CISe\ and \CGSe\ photovoltaic absorbers as revealed by first-principles hybrid functional calculations

The inconclusive results of the previous first-principles studies on the \S3 \ grain boundaries (GBs) in \CISe\ reveal the importance of employing a method that can correctly describe the electronic structure of this solar-cell material. We have employed hybrid functional calculations to study the \S3 (112) and \S3 (114) GBs in \CISe\ and \CGSe. The electronic structure changes introduced by the formation of GBs are threefold: creation of gap states, shift in band edges, and alteration of bandgap sizes. Gap states commonly behave as recombination centers, but the band alignment and the change in the bandgap size induced by GBs mitigate the destructive effect of these states in \CISe. That means, \S3 \ GBs are not detrimental for the carrier transport in devices based on \CISe. Conversely, these GBs are destructive for the carrier transport in \CGSe. The different behaviors of the \S3 \ GBs in CISe and CGSe might be considered by experimentalists to optimize the device fabrication to achieve high-performance solar cells.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Chemical disorder as engineering tool for spin-polarizationin Mn3Ga-based Heusler systems

Our study highlights spin-polarization mechanisms in metals, by focusing on the mobilities of conducting electrons with different spins instead of their quantities. Here, we engineer electron mobility by applying chemical disorder induced by non-stoichiometric variations. As a practical example, we discuss the scheme that establishes such variations in tetragonal Mn3Ga Heusler material. We justify this approach using first-principles calculations of the spin-projected conductivity components based on the Kubo-Greenwood formalism. It follows that, in majority of the cases, even a small substitution of some other transition element instead of Mn may lead to a substantial increase in spin-polarization along the tetragonal axis.

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preprint2013arXiv

Disorder-induced cubic phase in Fe$_2$-based Heusler alloys

Based on first-principles electronic structure calculations, we analyze the chemical and magnetic mechanisms stabilizing the cubic phase in Fe$_2$-based Heusler materials, which were previously predicted to be tetragonal when being chemically ordered. In agreement with recent experimental data, we found that these compounds crystallize within the so-called "inverted" cubic Heusler structure perturbed by a certain portion of the intrinsic chemical disorder. Understanding these mechanisms is a necessary step to guide towards the successful future synthesis of the stable Fe$_2$-based tetragonal phases, which are very promising candidates for the fabrication of rare-earth-free permanent magnets.

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preprint2012arXiv

Topological phase transition induced by random substitution

The transition from topologically nontrivial to a trivial state is studied by first-principles calculations on bulk zinc-blende type (Hg$_{1-x}$Zn$_x$)(Te$_{1-x}$S$_x$) disordered alloy series. The random chemical disorder was treated by means of the Coherent Potential Approximation. We found that although the phase transition occurs at the strongest disorder regime (${x\approx 0.5}$), it is still manifested by well-defined Bloch states forming a clear Dirac cone at the Fermi energy of the bulk disordered material. The computed residual resistivity tensor confirm the topologically-nontrivial state of the HgTe-rich (${x<0.5}$), and the trivial state of the ZnS-rich alloy series (${x>0.5}$) by exhibiting the quantized behavior of the off-diagonal spin-projected component, independently on the concentration $x$.

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preprint2012arXiv

Topological phase transitions in bulk

We consider the analogy between the topological phase transition which occurs as a function of spatial coordinate on a surface of a non-trivial insulator, and the one which occurs in the bulk due to the change of internal parameters (such as crystal field and spin-orbit coupling). In both cases the system exhibits a Dirac cone, which is the universal manifestation of topological phase transition, independently on the type of driving parameters. In particular, this leads to a simple way of determining the topological class based solely on the bulk information even for the systems with translational symmetry broken by atomic disorder or by strong electron correlations. Here we demonstrate this on example of the zinc-blende related semiconductors by means of the {\it ab-initio} fully-relativistic band structure calculations involving the coherent potential approximation (CPA) technique.

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