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Janek Maletz

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2 publications

preprint2015arXiv

Crystal growth and the electronic phase diagram of the 4dd doped Na1−δ_{1-δ}Fe1−x_{1-x}Rhx_xAs in comparison with 3dd doped Na1−δ_{1-δ}Fe1−x_{1-x}Cox_xAs

Single crystals of Na1−δ_{1-δ}Fe1−x_{1-x}Tx_xAs with T = Co, Rh have been grown using a self-flux technique. The crystals were thoroughly characterized by powder X-ray diffraction, magnetic susceptibility and electronic transport with particular focus on the Rh-doped samples. Measurements of the specific heat and ARPES were conducted exemplarily for the optimally doped compositions. The spin-density wave transition (SDW) observed for samples with low Rh concentration (0 ≤ x ≤ 0.0130\,\leq\,x\,\leq\,0.013) is fully suppressed in the optimally doped sample. The superconducting transition temperature (TcT_c) is enhanced from 1010~K in Na1−δ_{1-δ}FeAs to 2121~K in the optimally doped sample (xx = 0.019) of the Na1−δ_{1-δ}Fe1−x_{1-x}Rhx_xAs series and decreases for the overdoped compounds, revealing a typical shape for the superconducting part of the electronic phase diagram. Remarkably, the phase diagram is almost identical to that of Co-doped Na1−δ_{1-δ}FeAs, suggesting a generic phase diagram for both dopants.

preprint2015arXiv

Morphology of Superconducting FeSe thin films deposited by co-sputtering and MBE

The presumably unconventional superconductor Beta-FeSe was deposited by radio frequency sputtering and molecular beam epitaxy (MBE) from two elementary sources. Superconducting thin films were grown in (001)-orientation on MgO(100) and YAlO3(010) substrates. The morphology of the samples was studied and directly related to the superconducting properties of the Beta-FeSe thin films. The MBE grown thin films show microcracks down to the substrate and a roughness of about 100~nm. In contrast, sputter deposited superconducting thin films show a smooth surface with almost no precipitates. In both cases resistive superconducting transitions with critical temperature up to 8.5 K were observed. However, the smoothness of the sputter deposited films is crucial for future surface dependent investigations.

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