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Jan Philipp HÖpker

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Published work

2 published item(s)

preprint2022arXiv

Nanosecond gating of superconducting nanowire single-photon detectors using cryogenic bias circuitry

Superconducting nanowire single-photon detectors (SNSPDs) show near unity efficiency, low dark count rate, and short recovery time. Combining these characteristics with temporal control of SNSPDs broadens their applications as in active de-latching for higher dynamic range counting or temporal filtering for pump-probe spectroscopy or LiDAR. To that end, we demonstrate active gating of an SNSPD with a minimum off-to-on rise time of 2.4 ns and a total gate length of 5.0 ns. We show how the rise time depends on the inductance of the detector in combination with the control electronics. The gate window is demonstrated to be fully and freely, electrically tunable up to 500 ns at a repetition rate of 1.0 MHz, as well as ungated, free-running operation. Control electronics to generate the gating are mounted on the 2.3 K stage of a closed-cycle sorption cryostat, while the detector is operated on the cold stage at 0.8 K. We show that the efficiency and timing jitter of the detector is not altered during the on-time of the gating window. We exploit gated operation to demonstrate a method to increase in the photon counting dynamic range by a factor 11.2, as well as temporal filtering of a strong pump in an emulated pump-probe experiment.

preprint2021arXiv

Laser-lithographically written micron-wide superconducting nanowire single-photon detectors

We demonstrate the fabrication of micron-wide tungsten silicide superconducting nanowire single-photon detectors on a silicon substrate using laser lithography. We show saturated internal detection efficiencies with wire widths from 0.59$μ$m to 1.43$μ$m under illumination at 1550nm. We demonstrate both straight wires, as well as meandered structures. Single-photon sensitivity is shown in devices up to 4mm in length. Laser-lithographically written devices allow for fast and easy structuring of large areas while maintaining a saturated internal efficiency for wire width around 1$μ$m.