Researcher profile

Jamie H. Warner

Jamie H. Warner contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2016arXiv

Photon-assisted tunneling and charge dephasing in a carbon nanotube double quantum dot

We report microwave-driven photon-assisted tunneling in a suspended carbon nanotube double quantum dot. From the resonant linewidth at a temperature of 13 mK, the charge dephasing time is determined to be 280 +- 30 ps. The linewidth is independent of driving frequency, but increases with increasing temperature. The moderate temperature dependence is inconsistent with expectations from electron-phonon coupling alone, but consistent with charge noise arising in the device. The extracted level of charge noise is comparable with that expected from previous measurements of a valley-spin qubit, where it was hypothesized to be the main cause of qubit decoherence. Our results suggest a possible route towards improved valley-spin qubits.

preprint2016arXiv

Quantum Interference in Graphene Nanoconstrictions

We report quantum interference effects in the electrical conductance of chemical vapor deposited graphene nanoconstrictions fabricated using feedback controlled electroburning. The observed multimode Fabry-Perot interferences can be attributed to reflections at potential steps inside the channel. Sharp antiresonance features with a Fano line shape are observed. Theoretical modeling reveals that these Fano resonances are due to localized states inside the constriction, which couple to the delocalized states that also give rise to the Fabry-Perot interference patterns. This study provides new insight into the interplay between two fundamental forms of quantum interference in graphene nanoconstrictions.

preprint2016arXiv

Resonant optomechanics with a vibrating carbon nanotube and a radio-frequency cavity

In an optomechanical setup, the coupling between cavity and resonator can be increased by tuning them to the same frequency. We study this interaction between a carbon nanotube resonator and a radio-frequency circuit. In this resonant regime, the vacuum optomechanical coupling is enhanced by the DC voltage coupling the cavity and the mechanical resonator. Using the cavity to detect the nanotube's motion, we observe and simulate interference between mechanical and electrical oscillations. We measure the mechanical ring-down and show that further improvements to the system could enable measurement of mechanical motion at the quantum limit.

preprint2016arXiv

Room-temperature exciton-polaritons with two-dimensional WS2

Two-dimensional transition metal dichalcogenides exhibit strong optical transitions with significant potential for optoelectronic devices. In particular they are suited for cavity quantum electrodynamics in which strong coupling leads to polariton formation as a root to realisation of inversionless lasing, polariton condensationand superfluidity. Demonstrations of such strongly correlated phenomena to date have often relied on cryogenic temperatures, high excitation densities and were frequently impaired by strong material disorder. At room-temperature, experiments approaching the strong coupling regime with transition metal dichalcogenides have been reported, but well resolved exciton-polaritons have yet to be achieved. Here we report a study of monolayer WS$_2$ coupled to an open Fabry-Perot cavity at room-temperature, in which polariton eigenstates are unambiguously displayed. In-situ tunability of the cavity length results in a maximal Rabi splitting of $\hbar Ω_{\rm{Rabi}} = 70$ meV, exceeding the exciton linewidth. Our data are well described by a transfer matrix model appropriate for the large linewidth regime. This work provides a platform towards observing strongly correlated polariton phenomena in compact photonic devices for ambient temperature applications.

preprint2015arXiv

Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning

We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-electron transistors or three terminal single molecule transistors with enhanced gate coupling.

preprint2011arXiv

Direct Low Temperature Nano-Graphene Synthesis over a Dielectric Insulator

Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post synthesis transfer of the graphene onto a Si wafer or in the case of epitaxial growth on SiC, temperatures above 1000 °C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nano-graphene and few layer graphene is directly formed over magnesium oxide and can be achieved at temperatures as low as 325 °C.

preprint2011arXiv

The catalytic potential of high-k dielectrics for graphene formation

The growth of single and multilayer graphene nano-flakes on MgO and ZrO2 at low temperatures is shown through transmission electron microscopy. The graphene nano-flakes are ubiquitously anchored at step edges on MgO (100) surfaces. Density functional theory investigations on MgO (100) indicate C2H2 decomposition and carbon adsorption at step-edges. Hence, both the experimental and theoretical data highlight the importance of step sites for graphene growth on MgO.