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James P. Connolly

James P. Connolly contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2020arXiv

Theory of random nanoparticle layers in photovoltaic devices applied to self-aggregated metal samples

Random Al and Ag nanoparticle distributions are studied on varying substrates, where we exploit the nanosphere self-aggregation method (NSA) for fabrication. Relying on the measured particle size distributions of these samples, we develop a theoretical model that can be applied to arbitrary random nanostructure layers as is demonstrated for several distinct NSA samples. As a proof of concept, the optical properties of the exact same particles distributions, made from the quasi random modeling input with electron beam lithography (EBL), are investigated from both theory and experiment. Our numerical procedure is based on rigorous solutions of Maxwell's equations and yields optical spectra of fully interacting randomly positioned nanoparticle arrays. These results constitute a new methodology for improving the optical performance of layers of nanoparticles with direct application to enhanced photovoltaics.

preprint2013arXiv

III-V Solar Cells

III-V materials show a wide range of gaps making them ideal for the design of high efficiency solar cells. This chapter reviews relevant growth methods and material properties of these materials and discusses methods of combining heterogeneous materials, demonstrating the flexibility of design possible with these materials. The fundamental loss mechanisms of solar cells are analysed and quantified as a prelude to analysing high efficiency cell designs in single, tandem, and triple junction solar cells. The detailed analysis of loss mechanisms is used to obtain understanding of the limiting behaviour of these designs, and show that bulk cells remain dominated by non-radiative losses despite unity ideality factors. To conclude, this is contrasted with the operating regime of nanostructured solar cells which can be shown to operate in a radiatively dominated mode, and which therefore approach ideal solar cell efficiency limits.

preprint2012arXiv

Analytical Models of Bulk and Quantum Well Solar Cells and Relevance of the Radiative Limit

The analytical modelling of bulk and quantum well solar cells is reviewed. The analytical approach allows explicit estimates of dominant generation and recombination mechanisms at work in charge neutral and space charge layers of the cells. Consistency of the analysis of cell characteristics in the light and in the dark leaves a single free parameter, which is the mean Shockley-Read-Hall lifetime. Bulk PIN cells are shown to be inherently dominated by non-radiative recombination as a result of the doping related non-radiative fraction of the Shockley injection currents. Quantum well PIN solar cells on the other hand are shown to operate in the radiative limit as a result of the dominance of radiative recombination in the space charge region. These features are exploited using light trapping techniques leading to photon recycling and reduced radiative recombination. The conclusion is that the mirror backed quantum well solar cell device features open circuit voltages determined mainly by the higher bandgap neutral layers, with an absorption threshold determined by the lower gap quantum well superlattice.

preprint2010arXiv

Modelling Multi Quantum Well Solar Cell Efficiency

The spectral response of quantum well solar cells (QWSCs) is well understood. We describe work on QWSC dark current theory which combined with SR theory yields a system efficiency. A methodology published for single quantum well (SQW) systems is extended to MQW systems in the Al(x) Ga(1-x) As and InGa(0.53x) As(x) P systems. The materials considered are dominated by Shockley-Read-Hall (SRH) recombination. The SRH formalism expresses the dark current in terms of carrier recombination through mid-gap traps. The SRH recombination rate depends on the electron and hole densities of states (DOS) in the barriers and wells, which are well known, and of carrier non-radiative lifetimes. These material quality dependent lifetimes are extracted from analysis of suitable bulk control samples. Consistency over a range of AlGaAs controls and QWSCs is examined, and the model is applied to QWSCs in InGaAsP on InP substrates. We find that the dark currents of MQW systems require a reduction of the quasi Fermi level separation between carrier populations in the wells relative to barrier material, in line with previous studies. Consequences for QWSCs are considered suggesting a high efficiency potential.

preprint2010arXiv

Simulating multiple quantum well solar cells

The quantum well solar cell (QWSC) has been proposed as a route to higher efficiency than that attainable by homojunction devices. Previous studies have established that carriers escape the quantum wells with high efficiency in forward bias and contribute to the photocurrent. Progress in resolving the efficiency limits of these cells has been dogged by the lack of a theoretical model reproducing both the enhanced carrier gen- eration and enhanced recombination due to the quantum wells. Here we present a model which calculates the incremental generation and recombination due to the QWs and is verified by modelling the experimental light and dark current-voltage characteristics of a range of III-V quantum well structures. We find that predicted dark currents are significantly greater than experiment if we use lifetimes derived from homostructure devices. Successful simulation of light and dark currents can be obtained only by introducing a parameter which represents a reduction in the quasi-Fermi level separation.