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James N. Fry

James N. Fry appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallastro-ph.COcond-mat.mtrl-sciphysics.comp-phquant-ph

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Published work

7 published item(s)

preprint2026arXiv

Simulating decoherence of two coupled spins using the generalized cluster correlation expansion

We simulate the coherence of two coupled electron spins interacting with a bath of nuclei using the generalized cluster correlation expansion (gCCE) method. An exchange interaction between the electrons facilitates a family of entangling gates that can be spoiled by nuclear-induced dephasing. Consequently, we study the dephasing of the coherent two-electron system by characterizing the $T_2$ and $T_2^*$ of the two-electron reduced density matrix for various system parameters in the range mimicking magnetic molecules, including magnetic field strength and orientation, exchange interaction strength, distance between the two spins, minimum distance between electron and nuclei and between nuclei, and nuclei density. We find the optimal regime for each parameter in which the coherence time is maximized and provide a physical understanding of it.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Clar's goblet on graphene: field modulated charge transfer in a hydrocarbon heterostructure

In certain configurations, the aromatic properties of benzene ring structured molecules allow for unpaired, reactive valence electrons (known as radicals). Clar's goblets are such molecules. With an even number of unpaired radicals, these nanographenes are topologically frustrated hydrocarbons in which pi-bonding network and topology of edges give rise to the magnetism. Clar's goblets are therefore valued as prospective qubits provided they can be modulated between magnetic states. Using first principles DFT, we demonstrate the effects of adsorption on both molecule and substrate in a graphene-Clar's goblet heterostructure. We look at the energy difference bewteen FM and AFM states of the system and discuss underlying physical and chemical mechanisms in reference to the highest occupied molecular orbital (HOMO) and second HOMO (HOMO-1). We find that the HOMO of the molecule in the FM state is right at the Fermi surface, which leads to the hybridization between molecular state and the graphene state near the Dirac point. Furthermore, we investigate qualitative changes in charge realignment and magnetic state under variable electric field. Transitions from FM to AFM and back to FM states are observed.

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preprint2022arXiv

Insights to negative differential resistance in \texorpdfstring{MoS\textsubscript{2}}{MoS2} Esaki diodes: a first-principles perspective

\ce{MoS_2} is a two dimensional material with a band gap depending on the number of layers and tunable by an external electric field. The experimentally observed intralayer band-to-band tunneling and interlayer band-to-band tunneling in this material present an opportunity for new electronic applications in tunnel field effect transistors. However, such a widely accepted concept has never been supported up by theoretical investigations based on first principles. In this work, using density functional theory, in conjunction with non-equilibrilibrium Green's function techniques and our electric field gating method, enabled by a large-scale computational approach, we study the relation between band alignment and transmission in planar and side-stack \ce{MoS_2} $p$-$i$-$n$ junction configurations. We demonstrate the presence of negative differential resistance for both in-plane and interlayer current, a staple characteristic of tunnel diode junctions, and analyze the physical origin of such an effect. Electrostatic potentials, the van der Waals barrier, and complex band analysis are also examined for a thorough understanding of Esaki Diodes.

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preprint2022arXiv

Single-Molecule Magnet Mn$_{12}$ on GaAs-supported Graphene: Gate Field Effects From First Principles

We study gate field effects on the Mn$_{12}$O$_{12}$(COOH)$_{16}$(H$_2$O)$_4$ | graphene | GaAs heterostructure via first-principles calculations. We find that under moderate doping levels electrons can be added to but not taken from the single-molecule magnet Mn$_{12}$O$_{12}$(COOH)$_{16}$(H$_2$O)$_4$ (Mn$_{12}$). The magnetic anisotropy energy (MAE) of Mn$_{12}$ decreases as the electron doping level increases, due to electron transfer from graphene to Mn$_{12}$ and change in the band alignment between Mn$_{12}$ and graphene. At an electron doping level of $-5.00 \times 10^{13}\, \textrm{cm}^{-2}$, the MAE decreases by about 18% compared with zero doping. The band alignment between graphene and GaAs is more sensitive to electron doping than to hole doping since the valence band of GaAs is close to the Fermi level. The GaAs substrate induces a small bandgap in the supported graphene under the zero gate field and a nearly strain-free configuration. Finally, we propose a vertical tunnel junction for probing the gate dependence of MAE via electron transport measurements.

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preprint2020arXiv

Gate field effects on the topological insulator BiSbTeSe2 interface

Interfaces between two topological insulators are of fundamental interest in condensed matter physics. Inspired by experimental efforts, we study interfacial processes between two slabs of BiSbTeSe2 (BSTS) via first principles calculations. Topological surface states are absent for the BSTS interface at its equilibrium separation, but our calculations show that they appear if the inter-slab distance is greater than 6 Ang. More importantly, we find that topological interface states can be preserved by inserting two or more layers of hexagonal boron nitride between the two BSTS slabs. In experiments, the electric current tunneling through the interface is insensitive to back gate voltage when the bias voltage is small. Using a first-principles based method that allows us to simulate gate field, we show that at low bias the extra charge induced by a gate voltage resides on the surface that is closest to the gate electrode, leaving the interface almost undoped. This provides clues to understand the origin of the observed insensitivity of transport properties to back voltage at low bias. Our study resolves a few questions raised in experiment, which does not yet offer a clear correlation between microscopic physics and transport data. We provide a road map for the design of vertical tunneling junctions involving the interface between two topological insulators.

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preprint2012arXiv

Gaussianizing the non-Gaussian lensing convergence field II: the applicability to noisy data

In paper I (Yu et al. [1]), we show through N-body simulation that a local monotonic Gaussian transformation can significantly reduce non-Gaussianity in a noise-free lensing convergence field. This makes the Gaussianization a promising theoretical tool to understand high-order lensing statistics. Here we present a study of its applicability in lensing data analysis, in particular when shape measurement noise is presented in lensing convergence maps. (i) We find that shape measurement noise significantly degrades the Gaussianization performance and the degradation increases for shallower surveys. (ii) The Wiener filter is efficient in reducing the impact of shape measurement noise. The Gaussianization of the Wiener-filtered lensing maps is able to suppress skewness, kurtosis, and the 5th- and 6th-order cumulants by a factor of 10 or more. It also works efficiently to reduce the bispectrum to zero.

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preprint2011arXiv

Gaussianizing the non-Gaussian lensing convergence field I: the performance of the Gaussianization

Motivated by recent works of Neyrinck et al. 2009 and Scherrer et al. 2010, we proposed a Gaussianization transform to Gaussianize the non-Gaussian lensing convergence field $κ$. It performs a local monotonic transformation $κ\rightarrow y$ pixel by pixel to make the unsmoothed one-point probability distribution function of the new variable $y$ Gaussian. We tested whether the whole $y$ field is Gaussian against N-body simulations. (1) We found that the proposed Gaussianization suppresses the non-Gaussianity by orders of magnitude, in measures of the skewness, the kurtosis, the 5th- and 6th-order cumulants of the $y$ field smoothed over various angular scales relative to that of the corresponding smoothed $κ$ field. The residual non-Gaussianities are often consistent with zero within the statistical errors. (2) The Gaussianization significantly suppresses the bispectrum. Furthermore, the residual scatters around zero, depending on the configuration in the Fourier space. (3) The Gaussianization works with even better performance for the 2D fields of the matter density projected over $\sim 300 \mpch$ distance interval centered at $z\in(0,2)$, which can be reconstructed from the weak lensing tomography. (4) We identified imperfectness and complexities of the proposed Gaussianization. We noticed weak residual non-Gaussianity in the $y$ field. We verified the widely used logarithmic transformation as a good approximation to the Gaussianization transformation. However, we also found noticeable deviations.

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