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Jakub Chęciński

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph cond-mat.dis-nn Emerging Technologies nlin.AO

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preprint2021arXiv

Multi-state MRAM cells for hardware neuromorphic computing

Magnetic tunnel junctions (MTJ) have been successfully applied in various sensing application and digital information storage technologies. Currently, a number of new potential applications of MTJs are being actively studied, including high-frequency electronics, energy harvesting or random number generators. Recently, MTJs have been also proposed in designs of a new platforms for unconventional or bio-inspired computing. In the present work, it is shown that serially connected MTJs forming a multi-state memory cell can be used in a hardware implementation of a neural computing device. A behavioral model of the multi-cell is proposed based on the experimentally determined MTJ parameters. The main purpose of the mutli-cell is the formation of the quantized weights of the network, which can be programmed using the proposed electronic circuit. Mutli-cells are connected to CMOS-based summing amplifier and sigmoid function generator, forming an artificial neuron. The operation of the designed network is tested using a recognition of the hand-written digits in 20x20 pixel matrix and shows detection ratio comparable to the software algorithm, using the weight stored in a multi-cell consisting of four MTJs or more.

preprint2020arXiv

Synchronization properties and reservoir computing capability of hexagonal spintronic oscillator arrays

The influence of array geometry on synchronization properties of a 2-D oscillator array is investigated based on a comparison between a rectangular and a hexagonal grid. The Kuramoto model is solved for a nearest-neighbor case with periodic boundary conditions and for a small-scale, realistic coupling case with 1/r^3 decay characteristic of spintronic oscillators. In both cases, it is found that the hexagonal grid choice leads to lower synchronization threshold and higher emission power than its rectangular counterpart, which results from increased connectivity, as well as, in the realistic-coupling case, from decreased contributions of the array edges. Additionally, a more general spin-torque oscillator model including both amplitude and phase as degrees of freedom is employed for reservoir computing simulations, showing that by using hexagonal grid one can increase the short-term memory capacity but not the parity-check capacity of the system.

preprint2015arXiv

Buffer influence on magnetic dead layer, critical current and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy

We present a thorough research on Ta/Ru-based buffers and their influence on features crucial from the point of view of applications of MTJs, such as critical switching current and thermal stability. We investigate devices consisting of buffer/FeCoB/MgO/FeCoB/Ta/Ru multilayers for three different buffers: Ta 5 / Ru 10 / Ta 3, Ta 5 / Ru 10 / Ta 10 and Ta 5 / Ru 20 / Ta 5 (all thicknesses in nm). In addition, we study systems with a single FeCoB layer deposited above as well as below the MgO barrier. The crystallographic texture and the roughness of the buffers are determined by means of XRD and atomic force microscopy measurements. Furthermore, we examine the magnetic domain pattern, the magnetic dead layer thickness and the perpendicular magnetic anisotropy fields for each sample. Finally, we investigate the effect of the current induced magnetization switching for nanopillar junctions with lateral dimensions ranging from 1 μm down to 140 nm. Buffer Ta 5 / Ru 10 / Ta 3, which has the thickest dead layer, exhibits a large increase in the thermal stability factor while featuring a slightly lower critical current density value when compared to the buffer with the thinnest dead layer Ta 5 / Ru 20 / Ta 5.

preprint2014arXiv

Rectification of radio frequency current in giant magnetoresistance spin valve

We report on a highly efficient spin diode effect in an exchange-biased spin-valve giant magnetoresistance (GMR) strips. In such multilayer structures, symmetry of the current distribution along the vertical direction is broken and, as a result, a non-compensated Oersted field acting on the magnetic free layer appears. This field, in turn, is a driving force of magnetization precessions. Due to the GMR effect, resistance of the strip oscillates following the magnetization dynamics. This leads to rectification of the applied radio frequency current and induces a direct current voltage $V_{DC}$. We present a theoretical description of this phenomenon and calculate the spin diode signal, $V_{DC}$, as a function of frequency, external magnetic field, and angle at which the external field is applied. A satisfactory quantitative agreement between theoretical predictions and experimental data has been achieved. Finally, we show that the spin diode signal in GMR devices is significantly stronger than in the anisotropic magnetoresistance permalloy-based devices.