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Jae-Ho Han

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Published work

3 published item(s)

preprint2015arXiv

The Kondo effect revisited: RG-improved perturbation theory based on the Schwinger-boson representation

Resorting to the Schwinger-boson representation for the description of a localized magnetic-impurity state, we develop an RG-improved (renormalization group) perturbation theory for the Kondo effect. This Schwinger-boson based RG-improved perturbation theory covers the whole temperature range from a decoupled local moment state to a local Fermi-liquid state through the crossover temperature regime, shown from the specific heat and spin susceptibility of the magnetic impurity. The Schwinger-boson based RG-improved perturbation theory makes the strong coupling fixed point at IR (infrared) accessible from the gaussian one at UV (ultraviolet) within the perturbation framework, regarded to be complementary to the Schwinger-boson based NCA (non-crossing approximation) self-consistent theory [Phys. Rev. Lett. {\bf 96}, 016601 (2006)]. The existence of the perturbatively accessible strong coupling fixed point implies the nature on the statistics of spinons, not determined by hands but chosen by the nature of strongly coupled systems.

preprint2012arXiv

Critical role of next-nearest-neighbor interlayer interaction in magnetic behavior of magnetic/nonmagnetic multilayers

We report magnetoresistance data in magnetic semiconductor multilayers, which exhibit a clear step-wise behavior as a function of external field. We attribute this highly non-trivial step-wise behavior to next-nearest-neighbor interlayer exchange coupling. Our microscopic calculation suggests that this next-nearest-neighbor coupling can be as large as 24% of the nearest-neighbor coupling. It is argued that such unusually long-range interaction is made possible by the quasi-one-dimensional nature of the system and by the long Fermi wavelength characteristic of magnetic semiconductors.

preprint2010arXiv

Spin Transfer Torque and Tunneling Magnetoresistance Dependences on the Finite Bias Voltages and Insulator Barrier Energy

We investigate the dependence of perpendicular and parallel spin transfer torque (STT) and tunneling magnetoresistance (TMR) on the insulator barrier energy in the magnetic tunnel junction (MTJ). We employed single orbit tight binding model combined with the Keldysh non-equilibrium Green's function method in order to calculate the perpendicular and parallel STT, and TMR in MTJ with the finite bias voltages. The dependences of STT and TMR on the insulator barrier energy are calculated for the semi-infinite half metallic ferromagnetic electrodes. We find that perfect linear relation between the parallel STT and the tunneling current for the wide range of the insulator barrier energy. Furthermore, the TMR also depends on the insulator barrier energy, which contradicts to the Julliere's simple model.