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Jacek K. Furdyna

Jacek K. Furdyna appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conquant-ph

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Published work

7 published item(s)

preprint2021arXiv

Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High-resolution transmission electron microscopy measurements reveal an abrupt and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found strong hysteresis for the antiferromagnetic-ferrimagnetic transition. An ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator.

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preprint2021arXiv

Fermi level tuning and band alignment in Mn doped InAs/GaSb

InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band alignment of the system. The measurement of Shubnikov-de-Haas oscillations, cyclotron resonance, and a non-linear Hall effect in Mn-doped samples indicate the coexistence of a high mobility two-dimensional electron gas and a hole gas. Conversely, in undoped InAs/GaSb, pure-n-type transport is observed. We hypothesize that Mn acceptor levels can pin the Fermi energy near the valence band edge of InAs, far from the interface, which introduces a strong band bending to preserve the band offset at the InAs/GaSb interface. The realization of the QAHE in this structure will thus require a careful control of the band alignment to preserve topological insulating character.

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preprint2020arXiv

Anomalous critical point behavior in dilute magnetic semiconductor (Ca,Na)(Zn,Mn)2Sb2

In this paper we report successful synthesis and magnetic properties of (Ca,Na)(Zn,Mn)2Sb2 as a new ferromagnetic dilute magnetic semiconductor (DMS). In this DMS material the concentration of magnetic moments can be controlled independently from the concentration of electric charge carriers that are required for mediating magnetic interactions between these moments. This feature allows us to separately investigate the effect of carriers and of spins on the ferromagnetic properties of this new DMS alloy, and particularly of the critical ferromagnetic behavior. We use modified Arrott plot technique to establish critical exponents b, g, and d of this alloy. We find that at low Mn concentrations (< 10 at.%), it is governed by short-range 3D-Ising behavior, with experimental values of b, g, and d very close to theoretical 3D-Ising values of 0.325, 1.24, and 4.815. However, as the Mn concentration increases, this DMS material exhibits a mixed-phase behavior, with g retaining its 3D-Ising characteristics, but b crossing over to longer-range mean-field behavior.

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preprint2015arXiv

Collective magnetization dynamics in ferromagnetic (Ga,Mn)As mediated by photo-excited carriers

We present a study of photo-excited magnetization dynamics in ferromagnetic (Ga,Mn)As films observed by time-resolved magneto-optical measurements. The magnetization precession triggered by linearly polarized optical pulses in the absence of an external field shows a strong dependence on photon frequency when the photo-excitation energy approaches the band-edge of (Ga,Mn)As. This can be understood in terms of magnetic anisotropy modulation by both laser heating of the sample and by hole-induced non-thermal paths. Our findings provide a means for identifying the transition of laser-triggered magnetization dynamics from thermal to non-thermal mechanisms, a result that is of importance for ultrafast optical spin manipulation in ferromagnetic materials via non-thermal paths.

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preprint2014arXiv

Molecular beam epitaxial growth of MoSe2 on graphite, CaF2 and graphene

We report the structural and optical properties of molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial graphene. Extensive characterizations reveal that 2H- MoSe2 grows by van-der-Waals epitaxy on all 3 substrates with a preferred crystallographic orientation and a Mo:Se ratio of 1:2. Photoluminescence at room temperature (~1.56 eV) is observed in monolayer MoSe2 on both CaF2 and epitaxial graphene. The band edge absorption is very sharp, <60 meV over 3 decades. Overcoming the observed small grains by promoting mobility of Mo atoms would make MBE a powerful technique to achieve high quality 2D materials and heterostructures.

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preprint2014arXiv

Ultrafast Probes of Nonequilibrium Hole Spin Relaxation in Ferromagnetic Semiconductor GaMnAs

We directly measure the hole spin lifetime in ferromagnetic GaMnAs via time- and polarization-resolved spectroscopy. Below the Curie temperature Tc, an ultrafast photoexcitation with linearly-polarized light is shown to create a non-equilibrium hole spin population via the dynamical polarization of holes through p-d exchange scattering with ferromagnetically-ordered Mn spins, and we characterize their relaxation dynamics. The observed relaxation consists of a distinct three-step recovery : (i) femtosecond (fs) hole spin relaxation ~ $160-200 fs, (ii) picosecond (ps) hole energy relaxation ~ 1-2 ps, and (iii) a coherent, damped Mn spin precession with a period of ~ 250 ps. The transient amplitude of the hole spin component diminishes with increasing temperature, directly following the ferromagnetic order, while the hole energy amplitude shows negligible temperature change, consistent with our interpretation. Our results thus establish the hole spin lifetimes in ferromagnetic semiconductors and demonstrate a novel spectroscopy method for studying non-equilibrium hole spins in the presence of correlation and magnetic order.

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preprint2012arXiv

Observation of the fractional ac Josephson effect: the signature of Majorana particles

Topological superconductors which support Majorana fermions are thought to be realized in one-dimensional semiconducting wires coupled to a superconductor. Such excitations are expected to exhibit non-Abelian statistics and can be used to realize quantum gates that are topologically protected from local sources of decoherence. Here we report the observation of the fractional a.c. Josephson effect in a hybrid semiconductor/superconductor InSb/Nb nanowire junction, a hallmark of topological matter. When the junction is irradiated with a radio-frequency f in the absence of an external magnetic field, quantized voltage steps (Shapiro steps) with a height hf/2e are observed, as is expected for conventional superconductor junctions, where the supercurrent is carried by charge-2e Cooper pairs. At high magnetic fields the height of the first Shapiro step is doubled to hf/e, suggesting that the supercurrent is carried by charge-e quasiparticles. This is a unique signature of Majorana fermions, elusive particles predicted ca. 80 years ago.

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