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Jacek Arabski

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Published work

3 published item(s)

preprint2020arXiv

Robust ferroelectric properties of organic Croconic Acid films grown on spintronically relevant substrates

The discovery of stable room temperature ferroelectricity in Croconic Acid, an organic ferroelectric material, with polarization values on par with those found in inorganic ferroelectric materials and highest among organic ferroelectric materials, has opened up possibilities to realize myriads of nano-electronic and spintronic devices based on organic ferroelectrics. Such possibilities require an adequate understanding of the ferroelectric properties of Croconic Acid grown on surfaces that are commonly employed in device fabrication. While several macroscopic studies on relatively larger crystals of Croconic Acid have been performed, studies on thin films are only in their early stages. We have grown thin films of Croconic Acid on gold and cobalt surfaces, which are commonly used in spintronic devices as metallic electrodes, and studied the ferroelectric response of the films using ex-situ Piezoresponse Force Microscopy at room temperature. We show that the polarization reversal in Croconic Acid domains is sensitive to the substrate surface. Using the same experimental protocol, we observe the robust polarization reversal of a single, mostly in-plane electrical domain for a cobalt substrate, whereas polarization reversal is hardly observed for a gold substrate. We attribute this difference to the influence of substrates on the Croconic Acid molecular networks. Our study suggests that to realize devices one has to take care about the substrate on which Croconic Acid will be deposited. The fact that polarization switching is robust on cobalt surface can be used to fabricate multifunctional devices that utilize the cobalt-Croconic Acid interface.

preprint2019arXiv

Thickness-dependent electron momentum relaxation times in thin iron films

Terahertz time-domain conductivity measurements in 2 to 100 nm thick iron films resolve the femtosecond time delay between applied electric fields and resulting currents. This response time decreases for thinner metal films. The macroscopic response time depends on the mean and the variance of the distribution of microscopic momentum relaxation times of the conducting electrons. Comparing the recorded response times with DC-conductivities demonstrates increasing variance of the microscopic relaxation times with increasing film thickness. At least two electron species contribute to conduction in bulk with substantially differing relaxation times. The different electron species are affected differently by the confinement because they have different mean free paths.

preprint2011arXiv

Random barrier double-well model for resistive switching in tunnel barriers

The resistive switching phenomenon in MgO-based tunnel junctions is attributed to the effect of charged defects inside the barrier. The presence of electron traps in the MgO barrier, that can be filled and emptied, locally modifies the conductance of the barrier and leads to the resistive switching effects. A double-well model for trapped electrons in MgO is introduced to theoretically describe this phenomenon. Including the statistical distribution of potential barrier heights for these traps leads to a power-law dependence of the resistance as a function of time, under a constant bias voltage. This model also predicts a power-law relation of the hysteresis as a function of the voltage sweep frequency. Experimental transport results strongly support this model and in particular confirm the expected power laws dependencies of resistance. They moreover indicate that the exponent of these power laws varies with temperature as theoretically predicted.