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Source author record

Jaap I. Dijkhuis

Jaap I. Dijkhuis appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
physics.opticscond-mat.mes-hallcond-mat.mtrl-scicond-mat.othercond-mat.supr-conquant-ph

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Published work

5 published item(s)

preprint2016arXiv

Measurement of light diffusion in ZnO nanowire forests

Optimum design of efficient nanowire solar cells requires better understanding of light diffusion in a nanowire array. Here we demonstrate that our recently developed ultrafast all-optical shutter can be used to directly measure the dwell time of light in a nanowire array. Our measurements on disordered ZnO nanowire arrays, "nanowire forests," indicate that the photon mean free path and the dwell time of light can be well predicted from SEM images.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ultrafast all-optical gated amplifier based on ZnO nanowire lasing

We present an ultrafast all-optical gated amplifier, or transistor, consisting of a forest of ZnO nanowire lasers. A gate light pulse creates a dense electron-hole plasma and excites laser action inside the nanowires. Source light traversing the nanolaser forest is amplified, partly as it is guided through the nanowires, and partly as it propagates diffusively through the forest. We have measured transmission increases at the drain up to a factor 34 for 385-nm light. Time-resolved amplification measurements show that the lasing is rapidly self-quenching, yielding pulse responses as short as 1.2 ps.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ultrafast all-optical shutter based on two-photon absorption

An ultrafast all-optical shutter is presented, based on a simple two-color two-photon absorption technique. For time-resolved luminescence measurements this shutter is an interesting alternative to the optical Kerr gate. The rejection efficiency is 99%, the switching-off and switching-on speeds are limited by the pulse length only, the rejection time is determined by the crystal slab thickness, and the bandwidth spans the entire visible spectrum. We show that our shutter can also be used for accurate measurement of group velocity inside a transparent material.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Observation of Preformed Electron-Hole Cooper Pairs

Electrons and holes in a semiconductor form hydrogen-atom-like bound states, called excitons. At high electron-hole densities the attractive Coulomb force becomes screened and excitons can no longer exist. Bardeen-Cooper-Schrieffer theory predicts that at such high densities co-operative many-body effects can at low temperatures induce a bound state, an electron-hole Cooper pair, comparable to an electron-electron Cooper pair in a superconductor. Here we report the first observation of preformed electron-hole Cooper pairs in a semiconductor. By measuring stimulated emission from a dense electron-hole gas in ZnO, we have explored both the crossover from the electron-hole plasma to the preformed Cooper-pair regime, and the crossover from the exciton to the preformed Cooper-pair regime.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ultrafast screening and carrier dynamics in ZnO: Theory and experiment

At carrier densities above the Mott density Coulomb screening destroys the exciton resonance. This, together with band-gap renormalization and band filling, severely affects the optical spectra. We have experimentally studied these effects by ultrafast pump-probe reflectivity measurements on a ZnO single crystal at various wavelengths around the exciton resonance and in a broad carrier-density range. Theoretically we determined the Mott density in ZnO to be $1.5\times10^{24}$ m$^{-3}$ at 300 K. Taking a field-theoretical approach, we derived and solved the Bethe-Salpeter ladder equation and we computed the density-dependent reflectivity and absorption spectra. A carrier dynamics model has been developed, containing three-photon absorption, carrier cooling, and carrier trapping near the surface. The agreement between the theoretical reflectivity based on our model and the experimental data is excellent.

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