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J. Y. Chan

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4 publications

preprint2013arXiv

Thermoelectric Properties of Intermetallic Semiconducting RuIn3 and Metallic IrIn3

Low temperature (<400 K) thermoelectric properties of semiconducting RuIn3 and metallic IrIn3 are reported. RuIn3 is a narrow band gap semiconductor with a large n-type Seebeck coefficient at room temperature (S(290K)~400 μV/K), but the thermoelectric Figure of merit (ZT(290K) = 0.007) is small because of high electrical resistivity and thermal conductivity (κ(290 K) ~ 2.0 W/m K). IrIn3 is a metal with low thermopower at room temperature (S(290K)~20 μV/K) . Iridium substitution on the ruthenium site has a dramatic effect on transport properties, which leads to a large improvement in the power factor and corresponding Figure of merit (ZT(380 K) = 0.053), improving the efficiency of the material by an over of magnitude.

preprint2010arXiv

Anisotropic superconductivity in layered LaSb2_2: the role of phase fluctuations

We present magnetic susceptibility and electrical transport measurements of the highly anisotropic compound LaSb2_2 observing a very broad transition into a clean, consistent with type-I, superconducting state with distinct features of 2 dimensionality. Application of hydrostatic pressure induces a 2- to 3-dimensional crossover evidenced by a reduced anisotropy and transition width. The superconducting transition appears phase fluctuation limited at ambient pressure with fluctuations observed for temperatures greater than 8 times the superconducting critical temperature.

preprint2010arXiv

Fermi surface evolution through a heavy fermion superconductor-to-antiferromagnet transition: de Haas-van Alphen effect in Cd-substituted CeCoIn5_5

We report the results of de-Haas-van-Alphen (dHvA) measurements in Cd doped CeCoIn5_5 and LaCoIn5_5. Cd doping is known to induce an antiferromagnetic order in the heavy fermion superconductor CeCoIn5_5, whose effect can be reversed with applied pressure. We find a slight but systematic change of the dHvA frequencies with Cd doping in both compounds, reflecting the chemical potential shift due to the addition of holes. The frequencies and effective masses are close to those found in the nominally pure compounds with similar changes apparent in the Ce and La compounds with Cd substitution. We observe no abrupt changes to the Fermi surface in the high field paramagnetic state for x∼xcx \sim x_c corresponding to the onset of antiferromagnetic ordering at H=0 in CeCo(In1−x_{1-x}Cdx_x)5_5. Our results rule out f−f-electron localization as the mechanism for the tuning of the ground state in CeCoIn5_5 with Cd doping.

preprint2009arXiv

Magnetic and thermodynamic properties of cobalt doped iron pyrite: Griffiths Phase in a magnetic semiconductor

Doping of the band insulator FeS2_2 with Co on the Fe site introduces a small density of itinerant carriers and magnetic moments. The lattice constant, AC and DC magnetic susceptibility, magnetization, and specific heat have been measured over the 0≤x≤0.0850\le x\le 0.085 range of Co concentration. The variation of the AC susceptibility with hydrostatic pressure has also been measured in a small number of our samples. All of these quantities show systematic variation with xx including a paramagnetic to disordered ferromagnetic transition at x=0.007±0.002x=0.007\pm 0.002. A detailed analysis of the changes with temperature and magnetic field reveal small power law dependencies at low temperatures for samples near the critical concentration for magnetism, and just above the Curie temperature at higher xx. In addition, the magnetic susceptibility and specific heat are non-analytic around H=0 displaying an extraordinarily sharp field dependence in this same temperature range. We interpret this behavior as due to the formation of Griffiths phases that result from the quenched disorder inherent in a doped semiconductor.

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